Sub-Micron Semiconductor Devices

Design and Applications
Herausgeber: Raman, Ashish; Kumar, Naveen; Shekhar, Deep

• Broschiertes Buch

Produktbeschreibung

This text discusses novel semiconductor devices including nanostructure field effect transistor, photodiodes, high-electron-mobility transistor, and oxide-based devices. It covers sub-micron semiconductor devices, device modeling, novel materials for devices, novel semiconductor devises, optimization techniques and application in detail.

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Produktdetails

• Verlag: Taylor & Francis Ltd (Sales)
• Seitenzahl: 392
• Erscheinungstermin: 4. Oktober 2024
• Englisch
• Abmessung: 254mm x 178mm x 21mm
• Gewicht: 708g
• ISBN-13: 9780367648107
• ISBN-10: 0367648105
• Artikelnr.: 71581380

Autorenporträt

Ashish Raman is presently working as Assistant Professor at Dr. B. R. Ambedkar National Institute of Technology. He is working as Principal investigator and member of various funded projects, funded by Science and Engineering Reaearch Board (SERB), Minestry of Electroncis and IT (MeitY), FIST, ISRO and many more projects. Deep Shekhar is associated as faculty in the Department of Electronics and Communication Engineering at National Institute of Technology, Jalandhar since 2016. He has expertise in solid state Devices, Anlog CMOS integrated Circuits, Nano scale Device design and simulation etc. Naveen Kumar is currently working as Research Associate at University of Glasgow, Scotland. His main areas of research interest are Semiconductor Device Physics, MEMS/NEMS, Spintronics, etc.

Inhaltsangabe

Chapter 1 Fundamental Phenomena in Nanoscale Semiconductor Devices
Zeinab Ramezani and Arash Ahmadivand
Chapter 2 Recent Advancements in Growth and Stability of Phosphorene:
Prospects for High-Performance Devices
Sushil Kumar Pandey, Vivek Garg, Nezhueyotl Izquierdo, and Amitesh Kumar
Chapter 3 Study of Transition Metal Dichalcogenides in Junctionless
Transistors and Effect of Variation in Dielectric Oxide
Prateek Kumar, Maneesha Gupta, Kunwar Singh, and Ashok Kumar Gupta
Chapter 4 GNRFET-Based Ternary Repeaters: Prospects and Potential
Implementation for Efficient GNR Interconnects
Afreen Khursheed and Kavita Khare
Chapter 5 An Effective Study on Particulate Matter (PM) Removal Using
Graphene Filter
Katyayani Bhardwaj, Aryan, and R.K. Yadav
Chapter 6 Recent Trends in Fabrication of Graphene-Based Devices for
Detection of Heavy Metal Ions in Water
Avik Sett, Monojit Mondal, Santanab Majumder, and Tarun Kanti Bhattacharyya
Chapter 7 Vertical Tunnel FET Having Dual MOSCAP Geometry
Vandana Devi Wangkheirakpam, Brinda Bhowmick, and Puspa Devi Pukhrambam
Chapter 8 Leakage Current and Capacitance Reduction in CMOS Technology
Ajay Somkuwar and Laxmi Singh
Chapter 9 Design of Gate-All-Around TFET with Gate-On-Source for Enhanced
Analog Performance
Navaneet Kumar Singh, Rajib Kar, and Durbadal Mandal
Chapter 10 Solving Schrodinger's Equation for Low-Dimensional
Nanostructures for Understanding Quantum Confinement Effects
Amit Kumar
Chapter 11 Simulation of Reconfigurable FET Circuits Using Sentaurus TCAD
Tool
Remya Jayachandran, Rama S. Komaragiri, and K. J. Dhanaraj
Chapter 12 NEGF Method for Design and Simulation Analysis of Nanoscale MOS
Devices
Chhaya Verma and Jeetendra Singh
Chapter 13 Performance Investigation of a Novel Si/Ge Heterojunction
Asymmetric Double-Gate DLTFET for Low-Power Analog/RF and IoT Applications
Suruchi Sharma, Rikmantra Basu, and Baljit Kaur
Chapter 14 Synthesis of Graphene Nanocomposites Toward the Enhancement of
Energy Storage Performance for Supercapacitors
Monojit Mondal, Avik Sett, Dipak Kumar Goswami, and Tarun Kanti
Bhattacharyya
Chapter 15 Design and Analysis of Dopingless Charge-Plasma-Based Ring
Architecture of Tunnel Field-Effect Transistor for Low-Power Application
Ashok Kumar Gupta, Ashish Raman, Naveen Kumar, Deep Shekhar, and Prateek
Kumar
Chapter 16 Hybrid Intelligent Technique-Based Doping Profile Optimization
in a Double-Gate Hetero-Dielectric TFET
Sagarika Choudhury, Krishna Lal Baishnab, Brinda Bhowmick, and Koushik Guha
Chapter 17 Graphene Nanoribbon Devices: Advances in Fabrication and
Applications
Juan M. Marmolejo-Tejada, Jaime Velasco-Medina, and Andres Jaramillo-Botero
Chapter 18 Design and Analysis of Various Neural Preamplifier Circuits
Swagata Devi, Koushik Guha, and Krishna Lal Baishnab
Chapter 19 Design and Analysis of Transition Metal Dichalcogenide-Based
Feedback Transistor
Prateek Kumar, Maneesha Gupta, Kunwar Singh, Ashok Kumar Gupta, and Naveen
Kumar
Chapter 20 Reduced Graphene-Metal Phthalocyanine-Based Nanohybrids for
Gas-Sensing Applications
Aman Mahajan and Manreet Kaur Sohal
Chapter 21 Phosphorene Multigate Field-Effect Transistors for
High-Frequency Applications
Ramesh Rathinam, Adhithan Pon, and Arkaprava Bhattacharyya
Chapter 22 Analytical Modeling of Reconfigurable TransistorsRanjith Rajan,
Suja Krishnan Jagada, and Rama S. Komaragiri
Chapter 23 Flexi-Grid Technology: A Necessity for Spectral Resource
Utilization
Divya Sharma, Shivam Singh, Anurag Upadhyay, and Sofyan A. Taya