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Within this thesis fabrication processes for high-quality Josephson junctions based on niobium and aluminum oxide as well as niobium nitride and aluminum nitride on various substrates are discussed. Techniques for achieving a planar chip topography and sub-µm lateral dimensions, aiding the realization of sophisticated Josephson devices such as SQUIDs, flux-flow oscillators and long Josephson junctions with artificial phase discontinuities, are presented in detail.