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III-nitrides have demonstrated operation at high
electrical powers and high frequencies, sustaining
high temperatures and harsh environments, and have
enabled light sources and detectors in the blue to
deep ultraviolet spectral ranges. Piezoelectric
properties of aluminum nitride, gallium nitride,
indium nitride, and their alloys provide potential
for the integration of a light source, controlling
electronics and the surface acoustic waves (SAW)
device on the same chip. This book deals with the
propagation of the Rayleigh-type and leaky surface
acoustic waves (LSAW) in bulk and layered nitrides
and with the acousto-optic (AO) diffraction of
guided optical waves from the SAWs in AlxGa1-xN-on-
sapphire structures. This investigation allowed for
the extraction of a full set of elastic and
piezoelectric constants for AlN. The increase in
the diffraction efficiency with the decreasing
optical wavelength makes AlGaNvery promising for AO
applications in the deep UV region.
electrical powers and high frequencies, sustaining
high temperatures and harsh environments, and have
enabled light sources and detectors in the blue to
deep ultraviolet spectral ranges. Piezoelectric
properties of aluminum nitride, gallium nitride,
indium nitride, and their alloys provide potential
for the integration of a light source, controlling
electronics and the surface acoustic waves (SAW)
device on the same chip. This book deals with the
propagation of the Rayleigh-type and leaky surface
acoustic waves (LSAW) in bulk and layered nitrides
and with the acousto-optic (AO) diffraction of
guided optical waves from the SAWs in AlxGa1-xN-on-
sapphire structures. This investigation allowed for
the extraction of a full set of elastic and
piezoelectric constants for AlN. The increase in
the diffraction efficiency with the decreasing
optical wavelength makes AlGaNvery promising for AO
applications in the deep UV region.