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The monograph presents the results of synthesis of porous silica gas-sensitive materials for semiconductor hydrogen sulfide sensors. As a result of studying the activity and selectivity of individual and binary oxides in the oxidation of combustible gases the composition of the catalyst for the gas-sensitive element of the hydrogen sulfide sensor is selected. The selected catalysts provide high selectivity of the PSS in a wide range of temperatures and concentrations of the determined component. The optimum ratio of the initial components for the synthesis of silica gas-sensitive materials for…mehr

Produktbeschreibung
The monograph presents the results of synthesis of porous silica gas-sensitive materials for semiconductor hydrogen sulfide sensors. As a result of studying the activity and selectivity of individual and binary oxides in the oxidation of combustible gases the composition of the catalyst for the gas-sensitive element of the hydrogen sulfide sensor is selected. The selected catalysts provide high selectivity of the PSS in a wide range of temperatures and concentrations of the determined component. The optimum ratio of the initial components for the synthesis of silica gas-sensitive materials for the semiconductor hydrogen sulfide sensor was selected. The maturation period of the film-forming solution of the stable state was established. It was found that increasing the process temperature with a slight change in solution viscosity leads to a sharp decrease in the solution stability time. The book is intended for specialists in the field of analytical chemistry, ecology, engineers and technicians and laboratory assistants performing work in gas analysis and design of automatic gas analytical equipment, graduate and undergraduate students of the same specialties.
Autorenporträt
Begmatov Rizamat Hushvaktovich - Doktor der Philosophie (PhD) in Chemie. Lehrbeauftragter der Abteilung für analytische Chemie an der Staatlichen Universität Samarkand, benannt nach Sharof Rashidov.