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This book is about the synthesis,Characterization of high k nano materials like La2o3 ,LaAlo3 and simulation of device characteristics for future CMOS applications.Synthesis and characterization of La2O3 and LaAlO3 materials by chemical methods like combustion method, pechini method and gelation precipitation method. (ii) Simulation of device characteristics for La2O3 and LaAlO3 materials,for Metal Oxide Semiconductor Field Effect Transistors is done by Quantum wise and Nanohub simulation tools. Also design of Inverter, NAND, NOR gates are investigated for High K dielectric La2O3 gate…mehr

Produktbeschreibung
This book is about the synthesis,Characterization of high k nano materials like La2o3 ,LaAlo3 and simulation of device characteristics for future CMOS applications.Synthesis and characterization of La2O3 and LaAlO3 materials by chemical methods like combustion method, pechini method and gelation precipitation method. (ii) Simulation of device characteristics for La2O3 and LaAlO3 materials,for Metal Oxide Semiconductor Field Effect Transistors is done by Quantum wise and Nanohub simulation tools. Also design of Inverter, NAND, NOR gates are investigated for High K dielectric La2O3 gate materials (K=27) using Arizona State Universities Predictive Technology Models.
Autorenporträt
Dr. Kalagadda Bikshalu received Ph.D from JNTUH, Hyderabad and M.Tech in Digital Electronics & Communication Systems and B.Tech in ECE from JNTU, Hyderabad. Presently he is working as Assistant professor in Dept. of ECE, KUCE&T, Kakatiya University, India .His interests are High K dielectrics, Signal and Image processing and Low power VLSI.