The main defects of silicon carbide ingots and epitaxial layers - Tairov, Yuri;Lebedev, Andrew;Avrov, Dmitrii
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The work was done in oldest electrotechnical university of Europe - at the Saint Petersburg State Electrotechnical University at the Department of Micro- and Nanoelectronics. Where first of the world a method of silicon carbide growing bulk single crystals was developed in 1976. The method is now used in many laboratories and firms all over the world for sublimation growth of the SiC boules. More than 50 PhD thesis's, 500 articles and conference thesis's in the field of SiC crystals and epitaxial layers growth and characterization, devices fabrication have been prepared at the Department of Microelectronics under lead of Prof. Yu.M. Tairov.…mehr

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Produktbeschreibung
The work was done in oldest electrotechnical university of Europe - at the Saint Petersburg State Electrotechnical University at the Department of Micro- and Nanoelectronics. Where first of the world a method of silicon carbide growing bulk single crystals was developed in 1976. The method is now used in many laboratories and firms all over the world for sublimation growth of the SiC boules. More than 50 PhD thesis's, 500 articles and conference thesis's in the field of SiC crystals and epitaxial layers growth and characterization, devices fabrication have been prepared at the Department of Microelectronics under lead of Prof. Yu.M. Tairov.
Autorenporträt
Prof. Yu.M. Tairov has worked in the field of SiC growth, characterization and device fabrication for more than 50 years. The modified method of sublimation growth - Modified-Lely method - was elaborated under direct of Prof. Yu.M. Tairov at the St.Petersburg Electrotechnical University in 1976 and successfully employed for bulk crystal growth.