Manijeh Razeghi

The MOCVD Challenge

Volume 2: A Survey of GaInAsP-GaAs for Photonic and Electronic Device Applications

• Gebundenes Buch

Produktbeschreibung

The MOCVD Challenge: Volume 2, A Survey of GaInAsP-GaAs for Photonic and Electronic Device Applications focuses on GaAs systems and devices grown by MOCVD, specifically MOCVD growth of GaAs and related alloys and GaInP for photonic and electronic applications. Along with Volume 1, this book provides a personal account of the author's own pioneering research, an authoritative overview of the development of the MOCVD technique, and the technique's impact on the development of new materials, devices, and their applications. Coverage begins with an introduction to III-V compounds and devices and growth techniques for multilayers and heterostructures. The book then details how an MOCVD system works and how design affects material growth and sourcing of precursor materials. It also examines ^Iin- and ^Iex-situ growth techniques, with the differential reflectivity treatment applied to lattice matched and mis-matched conditions. The author gives an in-depth treatment of the GaInPGaAs system, including optical investigations of quantum wells and superlattices. The book concludes with an up-to-date discussion of the current use, novel developments, and future potential for optical devices, GaAs-based lasers and heterojunctions, and optoelectronic integrated circuits. The MOCVD Challenge is an invaluable introduction and guide for researchers in materials science, applied physics, and electrical engineering, who study the properties and applications of compound (III-V) semiconductor materials. Professor Manijeh Razeghi is director of the Center for Quantum Devices at Northwestern University and leads an internationally renowned research team exploring the use of the MOCVD growth technique. Formerly head of research at Thomson-CSF in France, she was awarded the IBM Europe Science and Technology Prize for her early research into MOCVD.

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Produktdetails

• Verlag: CRC Press
• Seitenzahl: 460
• Erscheinungstermin: 1. Januar 1995
• Englisch
• Abmessung: 240mm x 161mm x 29mm
• Gewicht: 851g
• ISBN-13: 9780750303095
• ISBN-10: 0750303093
• Artikelnr.: 23819967

Autorenporträt

Manijeh Razeghi

Inhaltsangabe

Preface. Foreword. Introduction. Introduction to semiconductor compounds.
MOCVD growth technique. ^IIn-situ characterization during MOCVD. ^IEx-situ
characterization techniques. MOCVD growth of GaAs layers. Growth and
characterization of the GaInP-GaAs system. Optical devices. GaAs-based
lasers. GaAs-based heterojunction electron devices grown by MOCVD.
Optoelectronic integrated circuits (OEICs). Appendices. Effect of substrate
miscut on the measured superlattice period. Optimization of thickness and
In composition of InGaAs well for 980 nm lasers. Energy levels and laser
gains in a quantum well (GaInAsP): the 'effective mass approximation'.
Luttinger-Kohn Hamiltonian. Infrared detectors. Index.

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Introduction to Semiconductor Compounds. Growth Technology. In situ Characterization during MOCVD. Ex situ Characterization Techniques. MOCVD Growth of GaAs Layers. Growth and Characterization of the GaInP-GaAs System. Optical Devices. GaAs-Based Lasers. GaAs-Based Heterojunction Electron Devices Grown by MOCVD. Optoelectronic Integrated Circuits (OEICs). InP-InP System: MOCVD Growth, Characterization and Applications. GaInAs-InP System: MOCVD Growth, Characterization and Applications. GaInAsP-InP System: MOCVD Growth, Characterization, and Applications. MOCVD Growth, Characterization and Applications of III-V Semiconductor Strained Heterostructures. MOCVD Growth of III-V Heterojunctions and Superlattices on Silicon Substrates and their Applications. Optoelectronic Devices Based on Quantum Structures. Appendices. Index.

Rezensionen

... a comprehensive review of GaInAsP-InP and GaInAsP-GaAs materials, III-V semiconductor compounds used for photonic and electronic device applications. This second edition represents the combined updated versions of the MOCVD Challenge. The author addresses a variety of relevant topics, including: growth technology, in situ characterization during MOCVD, ex situ characterization techniques, growth of GaAs layers, growth and characterization of the GaInP-GaAs system, optical devices, GaAs-based layers, optoelectronic integrated circuits, and optoelectronic devices on quantum structures.
-SciTech Book News, February 2011