Olof Engström is Professor Emeritus of Microtechnology and Nanoscience, Chalmers University of Technology, Göteborg, Sweden, having formerly held positions in industrial high-power MOS devices and sensors. His research focuses on semiconductor quantum structures and interfaces. He is a member of the Royal Swedish Academy of Engineering Sciences.
Inhaltsangabe
1. Introduction 2. Basic properties of the MOS system 3. Basic properties of the gate stack 4. Electron states at MOS interfaces 5. Carrier capture at bulk oxide traps 6. Electrical characterization by Fermi-probe technique 7. Electrical characterization by thermal action 8. Characterization of oxide/silicon energy band alignment: internal photoemission and x-ray photoelectron spectroscopy 9. Electron spin resonance 10. MOS systems with silicon dioxide dielectrics 11. MOS systems with high-k dielectrics 12. Gate metals and effective work function 13. Transmission probabilities and current leakage in gate oxides 14. MOS systems on high-mobility channel materials.
1. Introduction 2. Basic properties of the MOS system 3. Basic properties of the gate stack 4. Electron states at MOS interfaces 5. Carrier capture at bulk oxide traps 6. Electrical characterization by Fermi-probe technique 7. Electrical characterization by thermal action 8. Characterization of oxide/silicon energy band alignment: internal photoemission and x-ray photoelectron spectroscopy 9. Electron spin resonance 10. MOS systems with silicon dioxide dielectrics 11. MOS systems with high-k dielectrics 12. Gate metals and effective work function 13. Transmission probabilities and current leakage in gate oxides 14. MOS systems on high-mobility channel materials.
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