Theoretical Study of Electrical Properties of n-type GaN - Biswas, Arindam;Haldar, Sandip;Sarkar, Debasish
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In this book, A theoretical model of energy loss mechanism as a function of electron temperature and electron concentration has been given for n-type GaN structures. The energy relaxation rates and mobility for warm and hot electrons have been calculated for over the electron temperature(T) range of 1.5 to 500 K at lattice temperature T0=1.5 K. It has been found that the acoustic phonon scattering due to deformation potential and piezoelectric coupling are the dominant scattering mechanisms at low electron temperatures (Te 100 K, the polar optic phonon scattering becomes the effective…mehr

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Produktbeschreibung
In this book, A theoretical model of energy loss mechanism as a function of electron temperature and electron concentration has been given for n-type GaN structures. The energy relaxation rates and mobility for warm and hot electrons have been calculated for over the electron temperature(T) range of 1.5 to 500 K at lattice temperature T0=1.5 K. It has been found that the acoustic phonon scattering due to deformation potential and piezoelectric coupling are the dominant scattering mechanisms at low electron temperatures (Te 100 K, the polar optic phonon scattering becomes the effective scattering mechanism. The optic phonon energy of GaN was obtained as 91.8 meV and the PO phonon emission time as 8.6 fs. Also, the drift velocity of electrons as function of electron temperature and electric field has been obtained. The theoretical results are compared with available experimental results and a good agreement is observed.
Autorenporträt
Dr. Arindam BISWAS received M-Tech degree in Radio Physics and Electronics from University of Calcutta, India in 2010 and PhD from NIT Durgapur in 2013. He was a Post-Doctoral Researcher at Pusan National University, South Korea with BK21PLUS Fellowship, Republic of Korea, Visiting Professor at RIE, Shizuoka University, Japan.