Thin Film Materials for Photovoltaic Applications
Numerical Simulation and Optimization under SCAPS-1D of 3C-SiC properties
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The aim of this work is to study the possibility of applying in photovoltaic technology a binary semiconductor material with Silicon as the most responsive semiconductor in solar cell technology. Silicon carbide contains an important and widely used conductor not only because of its physical properties but also because of its photovoltaic properties that can be exploited in the manufacture of cells in the development of semiconductor materials for photovoltaic technology. The study is focused on a silicon-carbon binary component starting with the fundamental prospection of the structural and e...
The aim of this work is to study the possibility of applying in photovoltaic technology a binary semiconductor material with Silicon as the most responsive semiconductor in solar cell technology. Silicon carbide contains an important and widely used conductor not only because of its physical properties but also because of its photovoltaic properties that can be exploited in the manufacture of cells in the development of semiconductor materials for photovoltaic technology. The study is focused on a silicon-carbon binary component starting with the fundamental prospection of the structural and electronic properties of SiC under the Wien2k code; A numerical simulation with SCAPS-1D of two forms of PN and PiN based on SiC and 3C-SiC more precisely presented an adequate process for the choice of the most appropriate material as a transparent layer with this material and thus making it possible to have a better output of this photovoltaic cell exceeding the 20%. The study of some parameters playing a major role in the improvement of the
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