Trends In Capacitorless Dynamic Random Access Memory - Thakare, Yogesh
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Dynamic Random Access Memory (DRAM) is a type of computer memory known for its structural simplicity, consisting of just one transistor and one capacitor per bit. These capacitors store data as electrical charges, making DRAM highly efficient in terms of space and cost. However, its dynamic nature requires periodic refreshing to prevent data loss due to capacitor leakage, distinguishing it from static memory like SRAM. One significant advancement in DRAM technology is the 3T-1D design, which eliminates the need for external capacitors and offers advantages in scalability, process complexity,…mehr

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Produktbeschreibung
Dynamic Random Access Memory (DRAM) is a type of computer memory known for its structural simplicity, consisting of just one transistor and one capacitor per bit. These capacitors store data as electrical charges, making DRAM highly efficient in terms of space and cost. However, its dynamic nature requires periodic refreshing to prevent data loss due to capacitor leakage, distinguishing it from static memory like SRAM. One significant advancement in DRAM technology is the 3T-1D design, which eliminates the need for external capacitors and offers advantages in scalability, process complexity, and compatibility with logic processing steps. Despite its inherent challenges, DRAM's high density and cost-effectiveness continue to make it a vital component in modern computing systems.
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Autorenporträt
O Dr. Yogesh Thakare recebeu o grau de doutoramento em eletrónica e telecomunicações da Universidade Sant Gadge Baba Amravati, Amravati, Índia, em 2020. Trabalha atualmente como professor assistente na Faculdade de Engenharia e Gestão Shri Ramdeobaba, Nagpur, Maharashtra, Índia.