Tunneling Field Effect Transistor Technology

Herausgegeben:Zhang, Lining; Chan, Mansun

• Broschiertes Buch

Produktbeschreibung

This book provides a single-source reference to the state-of-the art intunneling field effect transistors (TFETs). Readers will learn the TFETsphysics from advanced atomistic simulations, the TFETs fabrication process andthe important roles that TFETs will play in enabling integrated circuit designsfor power efficiency.

Produktdetails

• Verlag: Springer / Springer International Publishing / Springer, Berlin
• Artikelnr. des Verlages: 978-3-319-81087-4
• Softcover reprint of the original 1st ed. 2016
• Seitenzahl: 224
• Erscheinungstermin: 22. April 2018
• Englisch
• Abmessung: 235mm x 155mm x 13mm
• Gewicht: 349g
• ISBN-13: 9783319810874
• ISBN-10: 3319810871
• Artikelnr.: 53573624

Inhaltsangabe

SteepSlope Devices and TFETs.- Tunnel-FETFabrication and Characterization.- Compact Models of TFETs.- Challenges and Designs of TFET for DigitalApplications.- Atomistic Simulations of Tunneling FETs.- Quantum TransportSimulation of III-V TFETs with Reduced-Order k ·p Method.- Carbon Nanotube TFETs: StructureOptimization with Numerical Simulation.