David L. Pulfrey is a Professor in the Department of Electrical and Computer Engineering at the University of British Columbia (UBC), Canada, where he has been since receiving his Ph.D. in 1968 from the University of Manchester, UK. He was the inaugural winner of UBC's Teaching Prize for Engineering (1990), and has received recognition for his research work on a wide range of semiconductor devices by being elected Fellow of the IEEE in 2000, and a Fellow of the Canadian Academy of Engineering in 2003.
Inhaltsangabe
Preface 1. Introduction 2. Energy band basics 3. Electron and hole concentrations 4. Thermal equilibrium 5. Charge transport 6. np-and Np-junction basics 7. Solar cells 8. Light-emitting diodes 9. HBT basics 10. MOSFET basics 11. HJFET basics 12. Transistor capacitances 13. Transistors for high-speed logic 14. Transistors for high frequencies 15. Transistors for memories 16. Transistors for high power 17. Transistors for low noise 18. Transistors for the future Appendix A. Physical constants Appendix B. Selected material properties Appendix C. N-MOSFET parameters Index.
Preface 1. Introduction 2. Energy band basics 3. Electron and hole concentrations 4. Thermal equilibrium 5. Charge transport 6. np-and Np-junction basics 7. Solar cells 8. Light-emitting diodes 9. HBT basics 10. MOSFET basics 11. HJFET basics 12. Transistor capacitances 13. Transistors for high-speed logic 14. Transistors for high frequencies 15. Transistors for memories 16. Transistors for high power 17. Transistors for low noise 18. Transistors for the future Appendix A. Physical constants Appendix B. Selected material properties Appendix C. N-MOSFET parameters Index.
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