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The work concentrate on the improvement of the ZnO photoconductive detector in the UV region. The improvement is based on two mechanisms : The first is the functionlization of the detector surface by specific polymer material and the second mechanism is to improve the structure of the film on the silicon layer through developing the porous layer on n-type silicon substrate.The creation of the nanospikes silicon layer provides strong carrier - carrier interaction. The strong interaction leads to new energy relaxation and recombination channels associated with the electron hole energy transfer. This new recombination mechanism may help in the fabrication of fast response photoconductive detector.