5,99 €
Statt 15,95 €**
5,99 €
inkl. MwSt.
**Preis der gedruckten Ausgabe (Broschiertes Buch)
Sofort per Download lieferbar
5,99 €
Statt 15,95 €**
5,99 €
inkl. MwSt.
**Preis der gedruckten Ausgabe (Broschiertes Buch)
Sofort per Download lieferbar

Alle Infos zum eBook verschenken
Als Download kaufen
Statt 15,95 €****
5,99 €
inkl. MwSt.
**Preis der gedruckten Ausgabe (Broschiertes Buch)
Sofort per Download lieferbar
Jetzt verschenken
Statt 15,95 €****
5,99 €
inkl. MwSt.
**Preis der gedruckten Ausgabe (Broschiertes Buch)
Sofort per Download lieferbar

Alle Infos zum eBook verschenken
  • Format: PDF

Scientific Essay from the year 2012 in the subject Physics - Electrodynamics, , language: English, abstract: A comprehensive study of p-n junction is necessary to design an electronic device as well as circuits. An electronic device controls the movement of electrons. The study of electronic devices requires a basic understanding of the relationship between electrons and other components of an atom. This leads to knowledge of the differences between conductors, insulators and semiconductors and to an understanding of p-type and n-type semiconductor material. p-n junction is formed by joining…mehr

Produktbeschreibung
Scientific Essay from the year 2012 in the subject Physics - Electrodynamics, , language: English, abstract: A comprehensive study of p-n junction is necessary to design an electronic device as well as circuits. An electronic device controls the movement of electrons. The study of electronic devices requires a basic understanding of the relationship between electrons and other components of an atom. This leads to knowledge of the differences between conductors, insulators and semiconductors and to an understanding of p-type and n-type semiconductor material. p-n junction is formed by joining p-type and n-type semiconductor materials. So the concept of semiconductor, majority and minority carrier of p-type and n-type semiconductor, doping, depletion region of p-n junction, mobility and conductivity, drift and diffusion current, carrier concentration calculation and Fermi energy level is actually the comprehensive study of p-n junction.

Dieser Download kann aus rechtlichen Gründen nur mit Rechnungsadresse in A, B, BG, CY, CZ, D, DK, EW, E, FIN, F, GR, HR, H, IRL, I, LT, L, LR, M, NL, PL, P, R, S, SLO, SK ausgeliefert werden.

Autorenporträt
Graduated from Ahsanullah University of Science and Technology, Dhaka, Bangladesh from the department of Electrical and Electronics Engineering. She lives in Bangladesh with her mother. She is the only inspiration for all her achievements. This Book is dedicated to her.