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Advanced Power Rectifier Concepts provides an in-depth treatment of the physics of operation of advanced power rectifiers. Analytical models for explaining the operation of all the advanced power rectifier devices are developed. Results of numerical simulations are provided for additional insight into device physics and for validation of various analytical models.
Drawing upon years of practical experience and using numerous examples and illustrative designs, B. Jayant Baliga discusses:
Analytical formulations for design and analysis of structures such as the Junction Barrier controlled
…mehr

Produktbeschreibung
Advanced Power Rectifier Concepts provides an in-depth treatment of the physics of operation of advanced power rectifiers. Analytical models for explaining the operation of all the advanced power rectifier devices are developed. Results of numerical simulations are provided for additional insight into device physics and for validation of various analytical models.

Drawing upon years of practical experience and using numerous examples and illustrative designs, B. Jayant Baliga discusses:

Analytical formulations for design and analysis of structures such as the Junction Barrier controlled Schottky (JBS) Rectifier and the Merged PiN Schottky (MPS) Rectifier

Numerical simulations to explain the operating physics and validate the models

The role of silicon carbide in the structural design and development of power rectifiers

Advanced Power Rectifier Concepts will be of interest to practicing engineers in the power semiconductor community and can also serve as a reference for graduate students and faculty doing research in an academic environment. Selected sections of the book can be used as supplementary teaching material for courses taught using the textbook 'Fundamentals of Power Semiconductor Devices' by the author.


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Autorenporträt
Professor Jayant Baglia is a Distinguished Professor of Electrical Engineering at North Carolina State University and is an internationally recognized expert on power semiconductor devices. He is a Member of the National Academy of Engineering and a Fellow of the IEEE. He spent 15 years at the General Electric Research and Development Center, Schenectady, NY, leading their power device effort and was bestowed the highest scientific rank of Coolidge Fellow. Among his many NCSU honors, he was the recipient of the 1998 O. Max Gardner Award given by the North Carolina University Board of Governors to the one person within the 16 constituent universities who has made 'the greatest contribution to the welfare of the human race'.

Prof. Baliga has authored 12 books and over 500 scientific articles. He has been granted more than 100 U.S. Patents. The IEEE has recognized him numerous times - most recently with the 'Lamme Medal' at Whitehall Palace in London. Scientific American magazine included him among the 'Eight Heroes of the Semiconductor Revolution' when commemorating the 50th anniversary of the invention of the transistor.