Advances in Multifunctional Materials and Systems II (eBook, PDF)

Redaktion: Akedo, Jun; Tseng, Tseung-Yuen; Chen, Xiangming

• Format: PDF

Produktbeschreibung

Contains a collection of papers from the below symposia held during the 10th Pacific Rim Conference on Ceramic and Glass Technology (PacRim10), June 2-7,2013, in Coronado, California 2012:

. Advances in Electroceramics

. Microwave Materials and Their Applications

. Oxide Materials for Nonvolatile Memory Technology and Applications

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Produktdetails

• Verlag: John Wiley & Sons
• Erscheinungstermin: 19. Februar 2014
• Englisch
• ISBN-13: 9781118771518
• Artikelnr.: 40515059

Inhaltsangabe

Preface vii ADVANCES IN ELECTROCERAMICS Pyroelectric Performances of Relaxor-Based Ferroelectric Single Crystals and their Applications in Infrared Detectors 3 Long Li
Haosu Luo
Xiangyong Zhao
Xiaobing Li
Bo Ren
Qing Xu
and Wenning Di Formation of Tough Foundation Layer for Electrical Plating on Insulator using Aerosol Deposition Method of Cu-Al203 Mixed Powder 17 Naoki Seto
Shingo Hirose
Hiroki Tsuda and Jun Akedo Formation and Electromagnetic Properties of 0.1 BTO/0.9NZFO Ceramic Composite with High Density Prepared by Three-Step Sintering Method 23 Bin Xiao
Juncong Wang
Ning Ma
and Piyi Du MICROWAVE MATERIALS AND THEIR APPLICATIONS Thin Glass Characterization in the Radio Frequency Range 37 Alfred Ebberg
Jürgen Meggers
Kai Rathjen
Gerhard Fotheringham
Ivan Ndip
Florian Ohnimus
Christian Tschoban
Isa Pieper
Andreas Kilian
Sebastian Methfessel
Martin Letz
and Ulrich Fotheringham Formation of Silver Nano Particles in Percolative Ag-PbTi03 Composite Dielectric Thin Film 51 Tao Hu
Zongrong Wang
Liwen Tang
Ning Ma
and Piyi Du Software for Calculating Permittivity of Resonators: HakCol & ErCalc 65 Rick Ubic Effects of MgO Additive on Structural
Dielectric Properties and Breakdown Strength of Mg2Ti04 Ceramics Doped with ZnO-B203 Glass 17 Xiaohong Wang
Mengjie Wang
Zhaoqiang Li
and Wenzhong Lu Design of Microwave Dielectrics Based on Crystallography 87 Hitoshi Ohsato OXIDE MATERIALS FOR NONVOLATILE MEMORY TECHNOLOGY AND APPLICATIONS Stable Resistive Switching Characteristics of Al203 Layers Inserted in Hf02 Based RRAM Devices 103 Chun-Yang Huang
Jheng-Hong Jieng
and Tseung-Yuen Tseng Improvement of Resistive Switching Properties of Ti/Zr02/Pt with Embedded Germanium 111 Chun-An Lin
Debashis Panda
and Tseung-Yuen Tseng Nonvolatile Memories Using Single Electron Tunneling Effects in Si Quantum Dots Inside Tunnel Silicon Oxide 117 Ryuji Ohba Resistive Switching and Rectification Characteristics with CoO/Zr02 Double Layers 123 Tsung-Ling Tsai
Jia-Woei Wu
and Tseng-Yuen Tseng Research Of Nano-Scaled Transition Metal Oxide Resistive Non-Volatile Memory (R-RAM) 129 ChiaHua Ho
Cho-Lun Hsu
Chun-Chi Chen
Ming-Taou Lee
Hsin-Hau Huang
Kai-Shin Li
Lu-Mei Lu
Tung-Yen Lai
Wen-Cheng Chiu
Bo-Wei Wu
MeiYi Li
Min-Cheng Chen
Cheng-San Wu
Yi-Ping Hsieh
and Fu-Liang Yang Author Index 137