Advances in Scanning Probe Microscopy (eBook, PDF)

Redaktion: Sakurai, T.; Watanabe, Y.

• Format: PDF

Produktbeschreibung

This book covers several of the most important topics of current interest in the forefront of scanning probe microscopy. These include a realistic theory of atom-resolving atomic force microscopy (AFM), fundamentals of MBE growth of III-V compound semiconductors and atomic manipulation for future single-electron devices.

---

Dieser Download kann aus rechtlichen Gründen nur mit Rechnungsadresse in A, B, BG, CY, CZ, D, DK, EW, E, FIN, F, GR, HR, H, IRL, I, LT, L, LR, M, NL, PL, P, R, S, SLO, SK ausgeliefert werden.

Produktdetails

• Verlag: Springer Berlin Heidelberg
• Seitenzahl: 343
• Erscheinungstermin: 6. Dezember 2012
• Englisch
• ISBN-13: 9783642569494
• Artikelnr.: 53083931

Inhaltsangabe

1 Theory of Scanning Probe Microscopy.- 1.1 Introduction.- 1.2 Scanning Tunneling Microscopy.- 1.3 Frictional Force Microscopy.- 1.4 Dynamic-Mode Atomic Force Microscopy.- 1.5 Non-Contact Mode Atomic Force Microscopy.- 1.6 Conclusion.- References.- 2 The Theoretical Basis of Scanning Tunneling Microscopy for Semiconductors - First-Principles Electronic Structure Theory for Semiconductor Surfaces.- 2.1 Introduction.- 2.2 Computational Methods.- 2.3 Surface Structures.- 2.4 Surface Dynamics.- References.- 3 Atomic Structure of 6H-SiC (0001) and (000$$bar{1}$$).- 3.1 Introduction.- 3.2 Surface Preparation.- 3.3 Surface Structure of 6H-SiC (0001) and (000$$bar{1}$$).- 3.4 Surface Phonons of 6H-SiC (0001).- 3.5 Effect of Surface Polarity for Gallium Adsorption onto 6H-SiC Surfaces.- 3.6 Conclusions.- References.- 4 Application of Atom Manipulation for Fabricating Nanoscale and Atomic-Scale Structures on Si Surfaces.- 4.1 Introduction.- 4.2 Experimental Aspects.- 4.3 Property Changes in the Si(111)?7x7 Surface.- 4.4 Properties of Dangling Bonds on the Si(100)?2x1?H Surface.- 4.5 Interaction of Adsorbates with Dangling Bonds on Si(100)?2x1?H Surfaces and Atomic Wire Fabrication.- 4.6 Conclusion.- References.- 5 Theoretical Insights into Fullerenes Adsorbed on Surfaces: Comparison with STM Studies.- 5.1 Introduction.- 5.2 Fullerene Research Background.- 5.3 Universal Features of C60 and C70 STM Images.- 5.4 Dipole Field Caused by Charge Transfer.- 5.5 Photo-Induced Excited States.- 5.6 Conclusion.- Appendix: All-Electron Mixed Basis Approach.- References.- 6 Apparent Barrier Height and Barrier-Height Imaging of Surfaces.- 6.1 Introduction.- 6.2 Properties of Barrier Height.- 6.3 Measurements of Barrier Height.- 6.4 Barrier-Height Imaging.- 6.5 Applications of BHImaging.- References.- 7 Mesoscopic Work Function Measurement by Scanning Tunneling Microscopy.- 7.1 Introduction.- 7.2 Work Function.- 7.3 Experimental Techniques.- 7.4 Results.- 7.5 Conclusion.- References.- 8 Scanning Tunneling Microscopy of III-V Compound Semiconductor (001) Surfaces.- 8.1 Introduction.- 8.2 Semiconductor Surface Reconstruction.- 8.3 GaAs(001) As-Rich Surface.- 8.4 GaAs(001) Ga-Rich Surface.- 8.5 Other Arsenide (001) Surfaces.- 8.6 Phosphide, Antimonide and Nitride (001) Surfaces.- 8.7 Conclusions.- References.- 9 Adsorption of Fullerenes on Semiconductor and Metal Surfaces Investigated by Field-Ion Scanning Tunneling Microscopy.- 9.1 Introduction.- 9.2 Experiment.- 9.3 Results and Discussions on Semiconductor Substrates.- 9.4 Results and Discussions on Metal Substrates.- 9.5 Conclusions.- References.