This book describes the operating principles of complementary metal oxide semiconductor (CMOS) image sensors, their architecture, readout circuits, and characterisation techniques. It discusses the fundamentals of charge generation and collection in silicon and covers in detail the characteristics of the pn junction and the metal oxide semiconductor field effect transistor (MOSFET), as the two most important building blocks of CMOS image sensors.
The book analyses the operating principles of the pinned photodiode (4T) pixel and describes the three transistor (3T) design and other pixel architectures. Much of the device operation is explained with the help of technology computer-aided design (TCAD) semiconductor simulations. Several advanced topics such as dark current, noise, backside illumination, noise and correlated double sampling are also covered.
The main audience includes physicists and engineers in image sensor characterisation, development and research.
Key Features:
- Includes many semiconductor device and circuit simulations as a tool to illustrate the operating principles.
- Covers both the semiconductor physics and the most important electronic circuits comprising a CMOS image sensor.
- Presents solved examples and a list of the most important "take-aways" within each chapter.
- Discusses some specialised topics, such as charge collection, sources of dark current, reflective barriers, backside illumination and potential gradients.
- Provides detailed analysis of the noise sources and the readout techniques in CMOS image sensors.
- Covers the on-chip readout circuits at transistor level and presents the essential off-chip electronics with practical examples.
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