This book describes in detail the semiconductor physics and the effects of the high temperatures and ionizing radiations in the electrical behavior of the Metal-OxideSemiconductor Field Effect Transistors (MOSFETs), implemented with the first and second generations of the differentiated layout styles. The authors demonstrate a variety of innovative layout styles for MOSFETs, enabling readers to design analog and RF MOSFETs that operate in a high-temperature wide range and an ionizing radiation environment with high electrical performance and reduced die area.
- Enables improved electrical performance, frequency response, energy efficiency, and die area usage of analog and RF CMOS ICs;
- Describes innovative layout styles for MOSFETs that don't entail an additional cost in manufacturing;
- Discusses the design of analog and RF MOSFETs that operate effectively in a high-temperature wide range and an ionizing radiation environment.
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