Marc A. Kastner, Stadford R. Ovshinsky, Gordon A. Thomas

Disordered Semiconductors (eBook, PDF)

• Format: PDF

Produktbeschreibung

Twenty-four years ago, Hellmut Fritzsche came to our laboratory to evaluate our work in amorphous materials. He came many times, sometimes bringing his violin to play with our youngest son, to talk, to help, to discover, and to teach. The times with him were always exciting and rewarding. There was a camaraderie in the early years that has continued and a friendship that has deepened among Iris and me and Hellmut, Sybille and their children. The vision that Hellmut Fritzsche shared with me, the many important contributions he made, the science that he helped so firmly to establish, the courage he showed in the time of our adversity, and the potential that he recognized put all of us in the amorphous field, not only his close friends and collaborators, in his debt. He helped make a science out of intuition, and played an important role not only in the experimental field but also in the basic theoretical aspects. It has been an honor to work with Hellmut through the years.

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Produktdetails

• Verlag: Springer US
• Seitenzahl: 792
• Erscheinungstermin: 6. Dezember 2012
• Englisch
• ISBN-13: 9781461318415
• Artikelnr.: 44044515

Inhaltsangabe

One: The Metal-Nonmetal Transition.- Impurity Bands in Silicon and Germanium.- Critical Phenomena Near the Metal-Insulator Transition.- The Metal-Insulator Transition at Millikelvin Temperatures.- Magnetic Field Induced Transitions in Disordered Metals.- Compensation Tuning Study of Metal Insulator Transition in Si:P.- The Metal-Insulator Transition in Compensated Silicon.- The Spectroscopic Investigation of Negatively Charged Donor Ions (D-States).- Magnetic Properties of Donors and Acceptors in Silicon: Similarities and Differences.- The AC Conductivity in n-Type Silicon Below the Metal- Insulator Transition.- Low Frequency Conductivity Anomalies of Strongly Disordered Semiconductors.- Inelastic Scattering Time of Electrons in Metallic Ge:Sb.- Localization Effects in Quasi-One-Dimensional Lithium Quench-Condensed Micro structures.- Potential Disorder in Granular Metals.- X-Ray and Neutron Scattering Studies of Graphite Intercalated with Two-Dimensional K-NH3Metal-Ammonia Solutions.- Pressure-Induced Effects on Phonons and Gap States in Alloy Semiconductors.- The Superconductor-Semiconductor Transition in Cation-Substituted Lithium Titanate, Li[MxTi2-x]04:M = Li+, Al3+, and Cr3+.- Two: Optical and Electronic Phenomena in Amorphous Chalcogenide Semiconductors.- Photoinduced and Radiation-Induced Structural Transformations in Vitreous Arsenic Chalcogenides.- New Aspects of Photoinduced Paramagnetic States in Chalcogenide Glasses.- On the Relationship Between ESR and Photodarkening in Glassy AS2S3.- Photo-Induced Effects in Amorphous Ge-S.- Polarization Memory of Photoluminescence and Photoinduced Optical Anisotropy in Chalcogenide Glasses.- The Quantum Nature of Amorphous Solids.- Changes in the Photoelectronic Properties of Glassy Chalcogenides Induced by Chemical Doping, Irradiation, and Thermal History.- A Model for the Electrical Doping of Chalcogenide Glasses by Bismuth.- Current Transient Studies of Al-a-As2Se3Contacts.- Optical Determination of the Fundamental Energy Gap of Amorphous M0S3.- Three: Structure and Bonding in Amorphous Semiconductors.- Structure of Amorphous Semiconductors.- The Sillium Model.- High Brilliance X-Ray Sources and the Study of Amorphous Materials.- X-Ray Absorption Studies of Amorphous Arsenic Chalcogenide Semiconductors.- Structural Order and Dynamics of Noncrystalline Condensed Matter.- Investigation of Medium Range Order by Photo-emission, Reflectivity, Laser-Induced Crystallization Raman Spectroscopy in Amorphous GeSe2.- Bonding and Short Range Order in a-GexTe1-xAlloys.- Refractive Index Dispersion and Structure of Chalcogenide Glasses.- Spectroscopic Ellipsometry Studies of Void Structure in Obliquely Deposited Amorphous Ge Films.- Four: Transient, Photoexcited and Spin Phenomena in Tetrahedral Amorphous Semiconductors.- Picosecond Photomodulation Studies of Carrier Trapping in a-Si:H.- Photoluminescence Studies of Band-Tail States in a-Si:H.- Recombination in a-Si:H Based Materials: Evidence for Two Slow Radiative Processes.- Thermal and Optical Quenching of the Photo- conductivity in a-Si:H-Films.- Recombination and the Standard Model in Amorphous Hydrogenated Silicon (a-Si:H): An Essay.- An Extension of Einstein s Treatment of Spontaneous Emission.- Optical and Photoelectrical Properties of a-Si:H Implanted By Mg Ions.- Determination of the Electronic Density of States of n-Type Hydrogenated Amorphous Silicon from Transient Sweep-Out Experiments.- Electron Correlation Energies in Hydrogenated Amorphous Silicon.- Defects in a-Si:H..- Five: Preparation and Characterization of Tetrahedral Amorphous Semiconductors.- Optical Absorption Edge of Hydrogenated Amorphous Silicon.- Preparation of a-Si and Its Related Materials by Hydrogen Radical Enhanced CVD.- Application of In Situ Ellipsometry to the Growth of Hydrogenated Amorphous Silicon.- Density of Gap States in Undoped and Doped Amorphous Hydrogenated Silicon Obtained by Optical Spectroscopy.- Structural and Electronic Properties of Pol