Duran Leblebici

Fundamentals of High-Frequency CMOS Analog Integrated Circuits (eBook, PDF)

• Format: PDF

Produktbeschreibung

With a design-centric approach, this textbook bridges the gap between fundamental analog electronic circuit textbooks and more advanced RF IC design texts. The major issues that must be taken into account when combining analog and digital circuit building blocks are covered, together with the key criteria and parameters that are used to describe system-level performance. Simple circuit models enable a robust understanding of high-frequency design fundamentals, and SPICE simulations are used to check results and fine-tune the design. With solved design examples to guide the reader through the decision process that accompanies each design task, this is an ideal textbook for senior undergraduate and graduate courses in RF CMOS circuits, RF circuit design, and high-frequency analog circuit design. Analog integrated circuit designers and RF circuit designers in industry who need help making design choices will also find this a practical and valuable reference.

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Produktdetails

• Verlag: Cambridge University Press
• Erscheinungstermin: 28. Mai 2009
• Englisch
• ISBN-13: 9780511536830
• Artikelnr.: 38197555

Autorenporträt

Duran Leblebici is Professor Emeritus of Electrical and Electronics Engineering at Istanbul Technical University (ITU). He has been teaching a range of undergraduate and graduate courses, from device electronics and fabrication to integrated electronic circuits and RF IC design, for over 40 years. He is the author of three textbooks in the field of electronics. He also established the first microelectronics laboratory in Turkey in 1975 and the first VLSI Design House in 1991. He received the Distinguished Service Award of the Turkish Scientific and Technological Research Council (TUBITAK) in 1992, in recognition of his services to microelectronics education.

Inhaltsangabe

Preface
1. Components of analog CMOS ICs
2. Basic MOS amplifiers: DC and low frequency behavior
3. High frequency behavior of basic amplifiers
4. Frequency selective RF circuits
5. LC oscillators
6. Signal converters for high frequencies (radio frequencies)
Appendices: A. Mobility degradation due to the transversal field
B. BSIM3 parameters of AMS 0.35 micron CMOS technology
C. Important parameters of 0.35 micron CMOS technology for hand calculations
D. Current sources and current mirrors
Index.