Handbook of GaN Semiconductor Materials and Devices (eBook, ePUB)

Redaktion: Bi, Wengang (Wayne); Shen, Bo; Ku, Peicheng; Kuo, Haochung (Henry)

• Format: ePub

Produktbeschreibung

This book addresses material growth, device fabrication, device application, and commercialization of energy-efficient white light-emitting diodes (LEDs), laser diodes, and power electronics devices. It covers the basics of semiconductor materials, physics, growth and characterization techniques.

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Produktdetails

• Verlag: Taylor & Francis
• Seitenzahl: 708
• Erscheinungstermin: 20. Oktober 2017
• Englisch
• ISBN-13: 9781351648059
• Artikelnr.: 50001992

Autorenporträt

Wayne Bi is distinguished chair professor and associate dean in the College of Information and Electrical Engineering, chief scientist in the State Key Laboratory of Reliability and Intelligence of Electrical Equipment, Hebei University of Technology, Tianjin, China. He earned his PhD in Applied Physics from the University of California, San Diego. He has worked in industry for over two decades including at Hewlett-Packard Laboratory, Agilent Technologies Laboratory, and Philips Lumileds, developing cutting-edge optoelectronic and photonic materials and device structures by molecular beam epitaxy (MBE) and metal organic vapor phase epitaxy (MOVPE) with their applications to optoelectronic and electronic devices. Previously he was chief engineer and Vice President of Najing Technology / NNCrystal. Dr. Bi has authored or co-authored over 60 refereed journal publications, and has presented numerous conference talks and is the inventor of twenty patents. He is an elected fellow of the Optical Society of America (OSA). Hao-chung (Henry) Kuo is Distinguished Professor and Associate Director of the Photonics Center at National Chiao-Tung University, Hsin-Tsu, Taiwan. He earned his doctorate in the Department of Electrical and Computer Engineering at the University of Illinois at Champaign Urbana. He has supervised over forty PhD and Master's level scientists and engineers and also has extensive industry experience, including at Bell Labs, Lucent Technologies, Agilent Technologies, and LuxNet Corporation. He has worked in the field of III-V optical devices and materials, solid state lighting process development, and fabrication and measurement of quantum devices. He is an associate editor of the IEEE Journal of Selected Topics in Quantum Electronics and Journal of Lightwave Technology. He has published over 300 papers in peer-reviewed journals, and is an elected fellow of SPIE, the Optical Society of America (OSA), the Institutio

Inhaltsangabe

Section I Fundamentals
1 III-Nitride Materials and Characterization
Bo Shen, Ning Tang, XinQiang Wang, ZhiZhong Chen, FuJun Xu, XueLin Yang,
TongJun Yu, JieJun Wu, ZhiXin Qin, WeiYing Wang, YuXia Feng, and WeiKun Ge
2 Microstructure and Polarization Properties of III-Nitride Semiconductors
Fernando A. Ponce
3 Optical Properties of III-Nitride Semiconductors
Plamen P. Paskov and Bo Monemar
4 Electronic and Transport Properties of III-Nitride Semiconductors
Yuh-Renn Wu
Section II Growth and Processing
5 Growth Technology for GaN and AlN Bulk Substrates and Templates
Michael Slomski, Lianghong Liu, John F. Muth, and Tania Paskova
6 III-Nitride Metalorganic Vapor-Phase Epitaxy
Daniel D. Koleske
7 Molecular Beam Epitaxial Growth of III-Nitride Nanowire Heterostructures
and Emerging Device Applications
Shizhao Fan, Songrui Zhao, Faqrul A. Chowdhury, Renjie Wang, and Zetian Mi
8 Advanced Optoelectronic Device Processing
Fengyi Jiang
Section III Power Electronics
9 Principles and Properties of Nitride-Based Electronic Devices
An-Jye Tzou, Chun-Hsun Lee, Shin-Yi Ho, Hao-Chung (Henry) Kuo, and
Jian-Jang Huang
10 Power Conversion and the Role of GaN
Srabanti Chowdhury
11 Recent Progress in GaN-on-Si HEMT
Kevin J. Chen and Shu Yang
12 Reliability in III-Nitride Devices
Davide Bisi, Isabella Rossetto, Matteo Meneghini, Gaudenzio Meneghesso, and
Enrico Zanoni
Section IV Light Emitters
13 Internal Quantum Efficiency for III-Nitride¿Based Blue Light-Emitting
Diodes
Zi-Hui Zhang, Yonghui Zhang, Hilmi Volkan Demir, and Xiao