This book covers the latest high-speed data rate connectivity technologies, discusses THz sensing and imaging devices based on nano devices and materials, describes SOI multigate nanowire FETs, and explains the theory underpinning nanoscale nanowire MOSFETs, simulation methods, and their results. It explores the physics of the SiGe heterojunction bipolar transistor (HBT), as well as commercially available SiGe HBT devices and their applications. It also details aspects of THz IC design using Si CMOS devices, including experimental setups for measurements, detection methods, and more.
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