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An up-to-date view of the various detector/emitter materials systems currently in use or being actively researched. The book is aimed at newcomers and those already working in the IR industry. It provides both an introductory text and a valuable overview of the entire field.
An up-to-date view of the various detector/emitter materials systems currently in use or being actively researched. The book is aimed at newcomers and those already working in the IR industry. It provides both an introductory text and a valuable overview of the entire field.
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Autorenporträt
Dr. Peter Capper is a Materials Team Leader at SELEX Sensors and Airborne Systems Infrared Ltd (formerly BAE Systems), and has over 30 years of experience in the infrared material Cadmium Mercury Telluride (CMT). He holds the patent for the application of the accelerated crucible rotation technique to CMT growth and is recognised as a world authority on CMT. He has written and edited 6 books on electronic materials and devices. He has served on several International Advisory boards to conferences, acted as co-Chair at an E-MRS Symposium and a SPIE Symposium and has edited several conference proceedings for J. Crystal Growth and J. Materials Science. He is also currently on the editorial board of the Journal of Materials Science: Materials in Electronics.
Inhaltsangabe
1 Introduction to Infrared Devices and Fundamentals of their Operation.- 1.1 Introduction.- 1.2 Types of IR detector.- 1.3 Emitters.- References.- 2 Assessment of Infrared Materials and Devices.- 2.1 Introduction.- 2.2 Material Characterization.- 2.3 Device Characterization.- 2.4 Detector Comparisons.- 2.5 Emitter Comparisons.- References.- 3 IV-VI (Lead Chalcogenide) Infrared Sensors and Lasers.- 3.1 Introduction.- 3.2 Some Material Properties.- 3.3 Growth Techniques.- 3.4 Infrared Sensors.- 3.5 Lead Salt Infrared Emitters.- References.- 4 Metal Silicide Schottky Infrared Detector Arrays.- 4.1 Introduction.- 4.2 Internal Photoemission.- 4.3 Silicon Substrate.- 4.4 Platinum Silicide.- 4.5 Cut-off Extension.- 4.6 Pixel Design.- 4.7 PtSi SB FPAs.- 4.8 Summary.- References.- 5 Pyroelectric Materials and Devices.- 5.1 Introduction.- 5.2 The Physics of Pyroelectric Detectors.- 5.3 Pyroelectric Materials and Their Selection.- 5.4 Pyroelectric Thermal Imaging.- 5.5 Pyroelectric Arrays, Design, Technology and Performance.- References.- 6 Uncooled Microbolometer Infrared Sensor Arrays.- 6.1 Introduction.- 6.2 Fabrication of Arrays of Thermal Sensors.- 6.3 Micromachined Microbolometer Design and Fabrication.- 6.4 Temperature-Sensitive Resistor Materials for Microbolometers.- 6.5 Microbolometer Micromachining Sequence.- 6.6 Typical Microbolometer Parameters.- 6.7 Thermal Isolation of Microbolometers.- 6.8 Infrared Absorption in Microbolometers.- 6.9 Readout of Two-dimensional Arrays of Microbolometers.- 6.10 Calculation of the Performance of Bolometer Arrays.- 6.11 Practical Infrared Cameras Using Microbolometer Array.- 6.12 Conclusion.- Acknowledgments.- References.- 7 InSb: Materials and Devices.- 7.1 InSb: the New-Old IR Material.- 7.2 InSb is Different.- 7.3 Purification and Doping.- 7.4 Crystal Growth.- 7.5 Fabrication.- 7.6 Finishing.- 7.7 Useful Techniques.- 7.8 InSb Devices.- References.- 8 Growth, Properties and Infrared Device Characteristics of Strained InAsSb-Based Materials.- 8.1 Introduction.- 8.2 Growth and Characterization of InAsSb by Metal-Organic Chemical Vapor Deposition (MOCVD).- 8.3 Infrared Device Results.- 8.4 Summary and Future Directions.- Acknowledgments.- References.- 9 Tl-Based III-V Alloy Semiconductors.- 9.1 Introduction.- 9.2 Expected Properties of Tl-Based III-V Alloys.- 9.3 Growth Issues.- 9.4 TlInSb on InSb.- 9.5 TuInAs on InAs.- 9.6 T1InP on InP.- 9.7 T1GaP on GaAs.- 9.8 T1GaAs on GaAs.- 9.9 T1InGaP on InP.- 9.10 TlInGaAs on InP.- 9.11 Summary.- References.- 10 MCT Materials Aspects.- 10.1 Introduction.- 10.2 Bulk Growth Techniques.- 10.3 Liquid Phase Epitaxy (LPE).- 10.4 Metal-Organic Vapor Phase Epitaxy (MOVPE).- 10.5 Molecular Beam Epitaxy (MBE).- References.- 11 Photoconductive and Non-equilibrium Devices in HgCdTe and Related Alloys.- 11.1 Introduction.- 11.2 Photoconductive Detectors.- 11.3 Non-equilibrium Devices.- 11.4 Conclusions.- Further Reading.- References.- 12 Photovoltaic Detectors in MCT.- 12.1 Introduction.- 12.2 Historical Perspective on Photovoltaic Detectors in MCT.- 12.3 MCT Hybrid Focal Plane Array Configurations.- 12.4 Principles of Operation and Figures of Merit for MCT PV Detectors.- 12.5 Junction Current Mechanisms for MCT Photodiodes.- 12.6 MCT Junction Photodiode Architectures.- 12.7 Recent Advances in SW and MW MCT Photodiodes.- 12.8 Recent Advances in VLW MCT Photodiodes.- 12.9 Dual-Band MCT Detector Arrays.- 12.10 Summary, Conclusions and Trends.- Acknowledgments.- References.- Appendix A: Guide to the HgCdTe Literature.- 13 Hg-Based Alternatives to MCT.- 13.1 Introduction.- 13.2Crystal Growth.- 13.3 Some Physical Properties.- 13.4 HgZnTe Detectors.- 13.5 HgMnTe Detectors.- 13.6 Conclusions.- References.- 14 Reduced-Dimensionality HgTe-CdTe for the Infrared.- 14.1 Introduction.- 14.2 Energy Bands and Effective Masses.- 14.3 MBE Growth.- 14.4 Absorption, Lifetime, and IR Detectors.- 14.5 Photoluminescence.- 14.6 IR Lasers.- 14.7 Summary.- References.- 15 Quantum Well Infra-red Detectors.- 15.1 Introduction.- 15.2 The QWIP as a Photoconductive Detector.- 15.3 The Microscopic Physics of the QWIP.- 15.4 Performance of AlGaAs/GaAs QWIPs.- 15.5 Optical Coupling Methods.- 15.6 Imaging Arrays.- 15.7 QWIPs in materials other than n-type AlGaAs/GaAs.- 15.8 Conclusions and Future Prospects.- References.
1 Introduction to Infrared Devices and Fundamentals of their Operation.- 1.1 Introduction.- 1.2 Types of IR detector.- 1.3 Emitters.- References.- 2 Assessment of Infrared Materials and Devices.- 2.1 Introduction.- 2.2 Material Characterization.- 2.3 Device Characterization.- 2.4 Detector Comparisons.- 2.5 Emitter Comparisons.- References.- 3 IV-VI (Lead Chalcogenide) Infrared Sensors and Lasers.- 3.1 Introduction.- 3.2 Some Material Properties.- 3.3 Growth Techniques.- 3.4 Infrared Sensors.- 3.5 Lead Salt Infrared Emitters.- References.- 4 Metal Silicide Schottky Infrared Detector Arrays.- 4.1 Introduction.- 4.2 Internal Photoemission.- 4.3 Silicon Substrate.- 4.4 Platinum Silicide.- 4.5 Cut-off Extension.- 4.6 Pixel Design.- 4.7 PtSi SB FPAs.- 4.8 Summary.- References.- 5 Pyroelectric Materials and Devices.- 5.1 Introduction.- 5.2 The Physics of Pyroelectric Detectors.- 5.3 Pyroelectric Materials and Their Selection.- 5.4 Pyroelectric Thermal Imaging.- 5.5 Pyroelectric Arrays, Design, Technology and Performance.- References.- 6 Uncooled Microbolometer Infrared Sensor Arrays.- 6.1 Introduction.- 6.2 Fabrication of Arrays of Thermal Sensors.- 6.3 Micromachined Microbolometer Design and Fabrication.- 6.4 Temperature-Sensitive Resistor Materials for Microbolometers.- 6.5 Microbolometer Micromachining Sequence.- 6.6 Typical Microbolometer Parameters.- 6.7 Thermal Isolation of Microbolometers.- 6.8 Infrared Absorption in Microbolometers.- 6.9 Readout of Two-dimensional Arrays of Microbolometers.- 6.10 Calculation of the Performance of Bolometer Arrays.- 6.11 Practical Infrared Cameras Using Microbolometer Array.- 6.12 Conclusion.- Acknowledgments.- References.- 7 InSb: Materials and Devices.- 7.1 InSb: the New-Old IR Material.- 7.2 InSb is Different.- 7.3 Purification and Doping.- 7.4 Crystal Growth.- 7.5 Fabrication.- 7.6 Finishing.- 7.7 Useful Techniques.- 7.8 InSb Devices.- References.- 8 Growth, Properties and Infrared Device Characteristics of Strained InAsSb-Based Materials.- 8.1 Introduction.- 8.2 Growth and Characterization of InAsSb by Metal-Organic Chemical Vapor Deposition (MOCVD).- 8.3 Infrared Device Results.- 8.4 Summary and Future Directions.- Acknowledgments.- References.- 9 Tl-Based III-V Alloy Semiconductors.- 9.1 Introduction.- 9.2 Expected Properties of Tl-Based III-V Alloys.- 9.3 Growth Issues.- 9.4 TlInSb on InSb.- 9.5 TuInAs on InAs.- 9.6 T1InP on InP.- 9.7 T1GaP on GaAs.- 9.8 T1GaAs on GaAs.- 9.9 T1InGaP on InP.- 9.10 TlInGaAs on InP.- 9.11 Summary.- References.- 10 MCT Materials Aspects.- 10.1 Introduction.- 10.2 Bulk Growth Techniques.- 10.3 Liquid Phase Epitaxy (LPE).- 10.4 Metal-Organic Vapor Phase Epitaxy (MOVPE).- 10.5 Molecular Beam Epitaxy (MBE).- References.- 11 Photoconductive and Non-equilibrium Devices in HgCdTe and Related Alloys.- 11.1 Introduction.- 11.2 Photoconductive Detectors.- 11.3 Non-equilibrium Devices.- 11.4 Conclusions.- Further Reading.- References.- 12 Photovoltaic Detectors in MCT.- 12.1 Introduction.- 12.2 Historical Perspective on Photovoltaic Detectors in MCT.- 12.3 MCT Hybrid Focal Plane Array Configurations.- 12.4 Principles of Operation and Figures of Merit for MCT PV Detectors.- 12.5 Junction Current Mechanisms for MCT Photodiodes.- 12.6 MCT Junction Photodiode Architectures.- 12.7 Recent Advances in SW and MW MCT Photodiodes.- 12.8 Recent Advances in VLW MCT Photodiodes.- 12.9 Dual-Band MCT Detector Arrays.- 12.10 Summary, Conclusions and Trends.- Acknowledgments.- References.- Appendix A: Guide to the HgCdTe Literature.- 13 Hg-Based Alternatives to MCT.- 13.1 Introduction.- 13.2Crystal Growth.- 13.3 Some Physical Properties.- 13.4 HgZnTe Detectors.- 13.5 HgMnTe Detectors.- 13.6 Conclusions.- References.- 14 Reduced-Dimensionality HgTe-CdTe for the Infrared.- 14.1 Introduction.- 14.2 Energy Bands and Effective Masses.- 14.3 MBE Growth.- 14.4 Absorption, Lifetime, and IR Detectors.- 14.5 Photoluminescence.- 14.6 IR Lasers.- 14.7 Summary.- References.- 15 Quantum Well Infra-red Detectors.- 15.1 Introduction.- 15.2 The QWIP as a Photoconductive Detector.- 15.3 The Microscopic Physics of the QWIP.- 15.4 Performance of AlGaAs/GaAs QWIPs.- 15.5 Optical Coupling Methods.- 15.6 Imaging Arrays.- 15.7 QWIPs in materials other than n-type AlGaAs/GaAs.- 15.8 Conclusions and Future Prospects.- References.
Rezensionen
`The book providesa useful, compact reference work for the infrated specialist and a good tutorial for the non-specialist, particularly through the two introductory chapters on the operating principles and assessment of devices, and theoretical sections dispersed amongst the other chapters. Chapters 1 and 2 are recommended reading before full immersion in the later chapters, which are all by well-known.' Measured Science Technology,12:9(2001)
`The book providesa useful, compact reference work for the infrated specialist and a good tutorial for the non-specialist, particularly through the two introductory chapters on the operating principles and assessment of devices, and theoretical sections dispersed amongst the other chapters. Chapters 1 and 2 are recommended reading before full immersion in the later chapters, which are all by well-known.' Measured Science Technology,12:9(2001)
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