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This book gives a state-of-the-art overview by internationally recognized researchers of the architectures of breakthrough devices required for future intelligent integrated systems. The first section highlights Advanced Silicon-Based CMOS Technologies. New device and functional architectures are reviewed in chapters on Tunneling Field-Effect Trans

Produktbeschreibung
This book gives a state-of-the-art overview by internationally recognized researchers of the architectures of breakthrough devices required for future intelligent integrated systems. The first section highlights Advanced Silicon-Based CMOS Technologies. New device and functional architectures are reviewed in chapters on Tunneling Field-Effect Trans

Dieser Download kann aus rechtlichen Gründen nur mit Rechnungsadresse in A, B, BG, CY, CZ, D, DK, EW, E, FIN, F, GR, HR, H, IRL, I, LT, L, LR, M, NL, PL, P, R, S, SLO, SK ausgeliefert werden.

Autorenporträt
Simon Deleonibus retired from CEA-LETI on January 1, 2016, as chief scientist after 30 years of research on the architecture of micro- and nanoelectronic devices. Before joining CEA-LETI, he was with Thomson Semiconductors (1981-1986), where he developed and transferred to production advanced microelectronic devices and products. He obtained his PhD in applied physics from Paris University (1982). He is a visiting professor at Tokyo Institute of Technology (Tokyo, Japan) since 2014, National Chiao Tung University (Hsinchu, Taiwan) since 2015, and Chinese Academy of Science (Beijing, PRC) since 2016. A recipient of several awards and honors, and erstwhile associate editor of the IEEE Transactions on Electron Devices (2008-2014), Prof. Deleonibus is research director of the CEA since 2002, a distinguished lecturer at IEEE since 2004, and a fellow of the IEEE since 2006 and of the Electrochemical Society since 2015.