With the use of ferroelectric materials in memory devices and the need for high-speed integrated optics devices, interest in ferroelectric thin films continues to grow. With their remarkable properties, such as energy nonvolatility, fast switching, radiative stability and unique optoacoustic and optoelectronic properties, Lithium Niobate-Based Heterostructures: Synthesis, properties and electron phenomena discusses why lithium niobate (LiNbO3) is one of the most promising of all ferroelectric materials. Based on years of study, this book presents the systematic characterization of substructure and electronic properties of a heterosystem formed in the deposition process of LiNbO3 films onto the surface of silicon wafers.
Providing a contemporary overview of the main properties of bulk LiNbO3, this book presents the advantage of thin LiNbO3 films and their applications in the integrated electronics and optoelectronics. Original results are demonstrated regarding the influence of synthesis conditions of RF magnetron sputtering (RFMS) and the ion-beam sputtering methods on structure and composition and surface morphology of as-grown LiNbO3 films. Optimal RFMS parameters are presented and electrical properties of Si-LiNbO3 heterostructures, fabricated by RFMS and IBS methods without the ion assisting effect are discussed, as well as the effect of sputtering conditions and thermal annealing on electron phenomena in the Si-LiNbO3 heterostructures.
Providing a contemporary overview of the main properties of bulk LiNbO3, this book presents the advantage of thin LiNbO3 films and their applications in the integrated electronics and optoelectronics. Original results are demonstrated regarding the influence of synthesis conditions of RF magnetron sputtering (RFMS) and the ion-beam sputtering methods on structure and composition and surface morphology of as-grown LiNbO3 films. Optimal RFMS parameters are presented and electrical properties of Si-LiNbO3 heterostructures, fabricated by RFMS and IBS methods without the ion assisting effect are discussed, as well as the effect of sputtering conditions and thermal annealing on electron phenomena in the Si-LiNbO3 heterostructures.
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