Materials Modification by High-fluence Ion Beams (eBook, PDF)
Redaktion: Kelly, Roger; Fernanda Da Silva, M.
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Materials Modification by High-fluence Ion Beams (eBook, PDF)
Redaktion: Kelly, Roger; Fernanda Da Silva, M.
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Proceedings of the NATO Advanced Study Institute on Materials Modification by High-Fluence Ion Beams, Viana do Castelo, Portugal, August 24-September 4, 1987
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Proceedings of the NATO Advanced Study Institute on Materials Modification by High-Fluence Ion Beams, Viana do Castelo, Portugal, August 24-September 4, 1987
Dieser Download kann aus rechtlichen Gründen nur mit Rechnungsadresse in A, B, BG, CY, CZ, D, DK, EW, E, FIN, F, GR, HR, H, IRL, I, LT, L, LR, M, NL, PL, P, R, S, SLO, SK ausgeliefert werden.
Produktdetails
- Produktdetails
- Verlag: Springer Netherlands
- Seitenzahl: 606
- Erscheinungstermin: 6. Dezember 2012
- Englisch
- ISBN-13: 9789400912670
- Artikelnr.: 44180548
- Verlag: Springer Netherlands
- Seitenzahl: 606
- Erscheinungstermin: 6. Dezember 2012
- Englisch
- ISBN-13: 9789400912670
- Artikelnr.: 44180548
- Herstellerkennzeichnung Die Herstellerinformationen sind derzeit nicht verfügbar.
Overview.- High-fluence ion irradiation: an overview.- Sputtering.- Historical overview on the fundamentals of sputtering.- Depth of origin of sputtered atoms.- Magnetron sputtering: physics and design.- On the formation and characterization of microcrystalline Si:H prepared by RF magnetron sputtering.- Depth profiling of Ta2O5 thin layer on Ta foil by ion scattering spectrometry and ion sputtering.- Bombardment of alkali and alkali-earth halides by ions and electrons.- Effects of Ar+ angle-of-incidence on the etching of Si with Cl2 and low-energy Ar+ ions.- Irradiation effects in ices by energetic ions.- Ion formation by very high energetic ion impact on solids.- Simulation.- Computer simulation of stopping and sputtering.- Computer simulation of ion-beam mixing of cobalt on silicon.- On the fractal nature of collision cascades.- Simple statistical models for erosion and growth.- Defects and Disorder.- Defects and defect processes.- Fast-ion-induced defects in silicon studied by deep level transient spectroscopy.- Low-energy (300 eV - 10 keV) Ar+ and Cl+ ion irradiation of (100) Si.- The charge state of iron implanted into sapphire.- Implantation and Mixing.- Direct and recoil implantation, and collisional ion-beam mixing: recent low-temperature experiments.- Mixing by defect-assisted migration of thin markers in solids.- The TRIUMF optically pumped polarized H- ion source.- Some high-current ion sources for materials modification.- Compositional and Chemical Changes.- Bombardment-induced compositional change with alloys, oxides, and oxysalts. I The role of the surface binding energy.- Investigation of preferential sputtering mechanisms by analysing the sample surface and near-surface region with AES and ISS.- High-fluence implantation in insulators. Part I:Compositional, mechanical, and optical changes.- High-fluence implantation in insulators. Part II: Chemical changes.- Electrochemical and corrosion behaviour of ion and laser-beam modified metal surfaces.- Structural Changes.- Ion-irradiation induced phase changes in metallic systems.- The topography of ion-bombarded surfaces.- Cultured blisters.- Electronic Changes.- Electronic properties of ion-implanted metals.- Mechanical Changes.- Tribology of implantation bilayers.- Adhesive and abrasive wear study of nitrogen implanted steels.- Effect of ?-recoil damage on the elastic moduli of zircon and tourmaline.- Depth-resolved investigation of structural transformations and hardness variations in implanted films on bulk samples.- Laser Processing.- Laser etching as an alternative.- Pulsed laser irradiation of heavily Ge implanted silicon.
Overview.- High-fluence ion irradiation: an overview.- Sputtering.- Historical overview on the fundamentals of sputtering.- Depth of origin of sputtered atoms.- Magnetron sputtering: physics and design.- On the formation and characterization of microcrystalline Si:H prepared by RF magnetron sputtering.- Depth profiling of Ta2O5 thin layer on Ta foil by ion scattering spectrometry and ion sputtering.- Bombardment of alkali and alkali-earth halides by ions and electrons.- Effects of Ar+ angle-of-incidence on the etching of Si with Cl2 and low-energy Ar+ ions.- Irradiation effects in ices by energetic ions.- Ion formation by very high energetic ion impact on solids.- Simulation.- Computer simulation of stopping and sputtering.- Computer simulation of ion-beam mixing of cobalt on silicon.- On the fractal nature of collision cascades.- Simple statistical models for erosion and growth.- Defects and Disorder.- Defects and defect processes.- Fast-ion-induced defects in silicon studied by deep level transient spectroscopy.- Low-energy (300 eV - 10 keV) Ar+ and Cl+ ion irradiation of (100) Si.- The charge state of iron implanted into sapphire.- Implantation and Mixing.- Direct and recoil implantation, and collisional ion-beam mixing: recent low-temperature experiments.- Mixing by defect-assisted migration of thin markers in solids.- The TRIUMF optically pumped polarized H- ion source.- Some high-current ion sources for materials modification.- Compositional and Chemical Changes.- Bombardment-induced compositional change with alloys, oxides, and oxysalts. I The role of the surface binding energy.- Investigation of preferential sputtering mechanisms by analysing the sample surface and near-surface region with AES and ISS.- High-fluence implantation in insulators. Part I:Compositional, mechanical, and optical changes.- High-fluence implantation in insulators. Part II: Chemical changes.- Electrochemical and corrosion behaviour of ion and laser-beam modified metal surfaces.- Structural Changes.- Ion-irradiation induced phase changes in metallic systems.- The topography of ion-bombarded surfaces.- Cultured blisters.- Electronic Changes.- Electronic properties of ion-implanted metals.- Mechanical Changes.- Tribology of implantation bilayers.- Adhesive and abrasive wear study of nitrogen implanted steels.- Effect of ?-recoil damage on the elastic moduli of zircon and tourmaline.- Depth-resolved investigation of structural transformations and hardness variations in implanted films on bulk samples.- Laser Processing.- Laser etching as an alternative.- Pulsed laser irradiation of heavily Ge implanted silicon.