69,95 €
69,95 €
inkl. MwSt.
Sofort per Download lieferbar
payback
35 °P sammeln
69,95 €
69,95 €
inkl. MwSt.
Sofort per Download lieferbar

Alle Infos zum eBook verschenken
payback
35 °P sammeln
Als Download kaufen
69,95 €
inkl. MwSt.
Sofort per Download lieferbar
payback
35 °P sammeln
Jetzt verschenken
69,95 €
inkl. MwSt.
Sofort per Download lieferbar

Alle Infos zum eBook verschenken
payback
35 °P sammeln
  • Format: PDF

This book is a comprehensive exposition of FET modeling, and is a must-have resource for seasoned professionals and new graduates in the RF and microwave power amplifier design and modeling community. In it, you will find descriptions of characterization and measurement techniques, analysis methods, and the simulator implementation, model verification and validation procedures that are needed to produce a transistor model that can be used with confidence by the circuit designer. Written by semiconductor industry professionals with many years' device modeling experience in LDMOS and III-V…mehr

  • Geräte: PC
  • mit Kopierschutz
  • eBook Hilfe
  • Größe: 5.01MB
  • FamilySharing(5)
Produktbeschreibung
This book is a comprehensive exposition of FET modeling, and is a must-have resource for seasoned professionals and new graduates in the RF and microwave power amplifier design and modeling community. In it, you will find descriptions of characterization and measurement techniques, analysis methods, and the simulator implementation, model verification and validation procedures that are needed to produce a transistor model that can be used with confidence by the circuit designer. Written by semiconductor industry professionals with many years' device modeling experience in LDMOS and III-V technologies, this was the first book to address the modeling requirements specific to high-power RF transistors. A technology-independent approach is described, addressing thermal effects, scaling issues, nonlinear modeling, and in-package matching networks. These are illustrated using the current market-leading high-power RF technology, LDMOS, as well as with III-V power devices.

Dieser Download kann aus rechtlichen Gründen nur mit Rechnungsadresse in A, B, BG, CY, CZ, D, DK, EW, E, FIN, F, GR, HR, H, IRL, I, LT, L, LR, M, NL, PL, P, R, S, SLO, SK ausgeliefert werden.

Autorenporträt
Peter H. Aaen is the Modeling Group Manager in the RF Division at Freescale Semiconductor, Inc., Tempe Arizona.
Jaime A. Piá is the Design Organization Manager in the RF Division at Freescale in the RF Division at Freescale Semiconductor, Inc., Tempe Arizona.
John Wood is Senior Technical Contributor responsible for RF CAD and Modeling in the RF Division at Freescale Semiconductor, Inc., Tempe, Arizona. He is a Fellow of the IEEE.