Viranjay M. Srivastava, Ghanshyam Singh

MOSFET Technologies for Double-Pole Four-Throw Radio-Frequency Switch (eBook, PDF)

• Format: PDF

Produktbeschreibung

This book provides analysis and discusses the design of various MOSFET technologies which are used for the design of Double-Pole Four-Throw (DP4T) RF switches for next generation communication systems. The authors discuss the design of the (DP4T) RF switch by using the Double-Gate (DG) MOSFET, as well as the Cylindrical Surrounding double-gate (CSDG) MOSFET. The effect of HFO₂ (high dielectric material) in the design of DG MOSFET and CSDG MOSFET is also explored. Coverage includes comparison of Single-gate MOSFET and Double-gate MOSFET switching parameters, as well as testing of MOSFETs parameters using image acquisition.

· Provides a single-source reference to the latest technologies for the design of

Double-gate MOSFET, Cylindrical Surrounding double-gate MOSFET and HFO₂ based MOSFET;

· Explains the design of RF switches using the technologies presented and simulates switches;

· Verifies parameters and discusses feasibility of devices and switches.

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Produktdetails

• Verlag: Springer Nature Switzerland
• Seitenzahl: 199
• Erscheinungstermin: 7. Oktober 2013
• Englisch
• ISBN-13: 9783319011653
• Artikelnr.: 43788562

Autorenporträt

Dr. Viranjay M. Srivastava is an Assistant Professor at Jaypee University of Information Technology. Dr. Ghanshyam Singh is an Associate Professor at Jaypee University of Information Technology.

Inhaltsangabe

Design of Double-Pole Four-Throw RF Switch.- Analysis and Design of Double-Gate MOSFET.- Analysis and Design of Proposed DP4T RF Switch Based on DG MOSFET.- Analysis and Design of CSDG MOSFET.- HFO2 Based Double-Gate MOSFET.- Testing of Proposed Device Parameters Using Image Acquisition.