Jian-Jang Huang, Hao-Chung Kuo, Shyh-Chiang Shen

Nitride Semiconductor Light-Emitting Diodes (LEDs) (eBook, ePUB)

Materials, Technologies, and Applications

• Format: ePub

Produktbeschreibung

Nitride Semiconductor Light-Emitting Diodes (LEDs): Materials, Technologies, and Applications, Second Edition reviews the fabrication, performance and applications of the technology, encompassing the state-of-the-art material and device development, along with considerations regarding nitride-based LED design. This updated edition is based on the latest research and advances, including two new chapters on LEDs for large displays and laser lighting. Chapters cover molecular beam epitaxy (MBE) growth of nitride semiconductors, modern metalorganic chemical vapor deposition (MOCVD) techniques, the growth of nitride-based materials, and gallium nitride (GaN)-on-sapphire and GaN-on-silicon technologies for LEDs. Nanostructured, non-polar and semi-polar nitride-based LEDs, as well as phosphor-coated nitride LEDs, are also discussed.

The book also addresses the performance of nitride LEDs, including photonic crystal LEDs, surface plasmon enhanced LEDs, color tuneable LEDs, and LEDs based on quantum wells and quantum dots. Further chapters discuss the development of LED encapsulation technology and fundamental efficiency droop issues in gallium indium nitride (GaInN) LEDs.

It is a technical resource for academics, physicists, materials scientists, electrical engineers, and those working in the lighting, consumer electronics, automotive, aviation, and communications sectors.

• Features new chapters on laser lighting, addressing the latest advances on this topic
• Reviews fabrication, performance, and applications of this technology that encompass the state-of-the-art material and device development
• Covers the performance of nitride LEDs, including photonic crystal LEDs, surface plasmon enhanced LEDs, color tuneable LEDs, and LEDs based on quantum wells and quantum dots
• Highlights applications of nitride LEDs, including liquid crystal display (LCD) backlighting, infra-red emitters, and automotive lighting
• Provides a comprehensive discussion of gallium nitride on both silicon and sapphire substrates

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Produktdetails

• Verlag: Elsevier Science & Techn.
• Seitenzahl: 822
• Erscheinungstermin: 24. Oktober 2017
• Englisch
• ISBN-13: 9780081019436
• Artikelnr.: 50004540

Autorenporträt

Prof. JianJang Huang received the B.S. degree in Electrical Engineering (EE) and the M.S. degree in Graduate Institute of Photonics and Optoelectronics (GIPO) from National Taiwan University (NTU), Taipei, Taiwan, in 1994 and 1996, respectively, and the Ph.D. degree in Electrical Engineering from the University of Illinois, Urbana-Champaign, in 2002. He had worked with WJ (Watkins Johnson) Communications in California, as a Staff Scientist from 2002 to 2004. He then came back to Taiwan in 2004 and is currently the professor at NTU EE and GIPO. Prof. Huang has been involved in the development of optoelectronic and electronic devices. He has developed a spin-coating method for nanosphere lithography (NSL) to significantly improve the performance of light emitting diodes (LEDs), solar cells and nanorod devices. His NSL approach has been licensed to several LED companies in Taiwan. He has also fabricated and characterized IGZO TFTs and the corresponding circuits on glass and flexible substrates. In recent years, his group has spent great efforts in realizing cancer cell probes using ZnO nanorods, and high-sensitivity protein sensors based on IGZO TFTs. Prof. Huang is a member of the Phi Tau Phi Scholastic Honor Society. He received "Wu Da-Yu? award in 2008, the most prestigious one for young researchers in Taiwan sponsored by National Science Council. And in the same year, he received the award for the most excellent young electrical engineer from the Chinese Institute of Electrical Engineering. He has served in several IPO committees in Taiwan Stock Exchange. He is currently the board director of GCS holdings in Torrance, CA, USA and the conference chair of SPIE, International Conference on Solid-State Lighting.

Inhaltsangabe

Part One Materials and fabrication
1. Molecular beam epitaxy (MBE) growth of nitride semiconductors
2. MOCVD growth of nitride semiconductors
3. GaN on sapphire substrates for visible light-emitting diodes
4. Gallium nitride (GaN) on silicon substrates for LEDs
5. Phosphors for white LEDs
6. Recent development of fabrication technologies of nitride LEDs for performance improvement
7. Nanostructured LED
8. Nonpolar and semipolar LEDs

Part Two Performance of nitride LEDs
9. Efficiency droop in GaInN/GaN LEDs
10. Photonic crystal nitride LEDs
11. Nitride LEDs based on quantum wells and quantum dots
12. Colour tuneable LEDs and pixelated micro-LED arrays
13. Reliability of nitride LEDs
14. Physical mechanisms limiting the performance and the reliability of GaN-based LEDs
15. Chip packaging: encapsulation of nitride LEDs

Part Three Applications of nitride LEDs
16. White LEDs for lighting applications
17. Ultraviolet LEDs
18. Infrared emitters using III-nitride semiconductors
19. LEDs for liquid crystal display (LCD) backlighting
20. LEDs and automotive lighting applications
21. LEDs for large displays
22. LEDs for projectors