Nuclear Physics Applications on Materials Science (eBook, PDF)

Redaktion: Recknagel, E.; Soares, J. C.

• Format: PDF

Produktbeschreibung

The last decade has seen a rapid development and growing importance in the application of nuclear physics methods to material sciences. It is a general desire to understand modern material problems on a microscopic scale, which, due to their inherent microscopic nature, made nuclear techniques highly suitable tools for basic and applied research in this field. The Advanced Study Institute on "Nuclear Physics Applications on Ma terials Science" brought together scientists active in different but closely re lated fields to review and discuss selected topics of bulk properties of metals, semiconductors and insulators as well as properties of surfaces, interfaces and thin films. Most of the excellent lectures and oral presentations of the School are collected in part I of the present volume, while extended abstracts of scientific work presented as posters are added in part II. The pleasant site of the ASI at Viana do Castelo and the northern province of Portugal, Alto Minho, provided the stimulating atmosphere for an in spiring School. Many people contributed to the scientific and social success of the institute. Thanks are especially due to the members of the local organizing committee, N. Ayres de Campos, M. Fernanda da Silva, A. Pedroso de Lima and my co-director J. Carvalho Soares. His permanent involvement in preparing and realization of the ASI was essential for this memorable School.

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Produktdetails

• Verlag: Springer Netherlands
• Seitenzahl: 458
• Erscheinungstermin: 6. Dezember 2012
• Englisch
• ISBN-13: 9789400928008
• Artikelnr.: 44055179

Inhaltsangabe

I: Lectures and Oral Presentations.- An Historical Perspective on Channeling and Ion Implantation.- Ion Beam Studies of Crystal and Interface Atomic Structure.- Materials Research with Channeling Combined with RBS, NRA and PIXE.- Resonance Planar Channeling Effect on Superlattices.- Channeling Radiation.- Localization of Impurity Atoms by Channeling of Electrons and Positrons.- Applications of Mössbauer Spectroscopy to Characterize Highly Doped Semiconductors.- Ion Beams as Tools of Materials Analysis.- Amorphous Phase Formation in Ion-Bombarded Metallic Alloys.- On Amorphization of NI-ZR by Ion-Beam Mixing and Other Techniques.- Rapid Thermal Annealing of Ion Implanted Semiconductors.- Impurity - Defect Interaction in Metals.- High Resolution Studies of the Internal Oxidation of Hafnium Implanted Magnesium Single Crystals, Using BaF2 Detectors.- Study of Nitrogen in Niobium and Tantalum Using the Perturbed Angular Correlation Method.- Metal-Hydrogen Systems Studied by PAC.- Surface Studies with Hyperfine Probes.- Peculiar Processes in Glass Surface Analysis.- Local Magnetism in Alloying and Nonalloying Systems.- Interface Tailoring to Enhance Thin Film Adhesion - A Review.- Perspectives.- II: Contributed Papers.- A Channeling Study of the Superionic ß-PbF2.- RBS Study of Annealed Iron-Aluminum Bilayer.- Abnormal Vibrations of Cd Atoms in ZnxCd1-xTe as Deduced from PIXE-RBS Channeling Experiments.- Laser Induced Effects on the HgCdTe Surface Characterized by RBS and AES.- MeV Implants into GaAs.- TDPAD Measurements on Diamond and Some of its Allotropes.- Study of the NbHx System in the Region 0.75?x?0.90 by Perturbed Angular Correlations.- Hydrogen Decoration of Vacancy Defects in Platinum.- PAC Studies on 111In Implanted into Metal Oxides.- Formation ofOxygen Decorated Defects in AgCd Alloys.- TDPAC Study of Cadmium-Indium Alloys.- The High-Tc Superconductor La1.8Sr0.2CuO4 Studied by DPAC.- Diffusion of 111Cd on Mo (110) Surfaces Observed by PAC.- On the Orientation Dependence of TDPAC Spectra.- A TDC-PC Interface for DPAC.- Defect Trapping in Iron Studied by NMR/ON.- H-Implantation-Induced Damage in Si.- Positron Annihilation Studies in Neutron Irradiated Steels.- Scattering Mechanisms of 4He+ Ions on Thin and Thick Cylindrical Targets of Heavy Metals.- Effect of ?-Recoil Damage on the Elastic Moduli of Zircon and Tourmaline.- Use of X-Rays for Characterizing Lightguide Materials.- A System Developed for Measuring the Luminescent Properties of Semiconductors.