This text treats the modelling and simulation of semiconductor devices in the quantum regime using a particle approach. The history of particle approaches and the difficulties of maintaining the quantum nature of the device are discussed. Particle-based simulation techniques of quantum devices have the additional advantage of providing very simple and intuitive ways of understanding the transport of electrons, allowing a demystifying view of quantum phenomena in semiconductor devices.
The current practice to incorporate quantum transport into semiconductor device modelling is based upon primary use of the non-equilibrium Green's functions (NEGF). These are numerically very difficult to implement, and have become, as a result, very approximate. The authors argue in this book that there is no need to renounce to an easy and clear understanding on what really happens inside the active region of semiconductor devices.
This is the first book to combine quantum transport and particle Monte Carlo techniques with a focus on modern semiconductor devices. Written in clear and accessible language suitable for graduate students, formal and technical details are included in several appendices, and a list of exercises and references for further reading are added at the end of each chapter.
The current practice to incorporate quantum transport into semiconductor device modelling is based upon primary use of the non-equilibrium Green's functions (NEGF). These are numerically very difficult to implement, and have become, as a result, very approximate. The authors argue in this book that there is no need to renounce to an easy and clear understanding on what really happens inside the active region of semiconductor devices.
This is the first book to combine quantum transport and particle Monte Carlo techniques with a focus on modern semiconductor devices. Written in clear and accessible language suitable for graduate students, formal and technical details are included in several appendices, and a list of exercises and references for further reading are added at the end of each chapter.
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