The introduction of spintronic devices such as MRAM, a nonvolatile memory, is considered inevitable for energy saving in integrated circuits. In such devices, the direction of magnetization of a magnetic layer corresponds to "0" or "1" of information. It is therefore essential to control the magnetization by electric current (voltage) or spin current. Under such circumstances, ferrimagnetic materials have attracted attention as materials for such devices.
This book covers important past research results on ferrimagnetic Mn4N based on bulk, as well as the latest research results on thin films, such as the demonstration of ultrafast current-induced magnetic domain wall motion and skyrmions. In addition, we cited as many figures from published articles and other sources as possible to facilitate the reader's understanding. Thus, for those who are new to ferrimagnetic Mn4N, this book alone provides an overview of the important research results reported on Mn4N over the past 100 years or so. It also provides a good opportunity for those who have already worked in this field to review the results to date.
This book covers important past research results on ferrimagnetic Mn4N based on bulk, as well as the latest research results on thin films, such as the demonstration of ultrafast current-induced magnetic domain wall motion and skyrmions. In addition, we cited as many figures from published articles and other sources as possible to facilitate the reader's understanding. Thus, for those who are new to ferrimagnetic Mn4N, this book alone provides an overview of the important research results reported on Mn4N over the past 100 years or so. It also provides a good opportunity for those who have already worked in this field to review the results to date.
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