E. Kasper, D.J. Paul

Silicon Quantum Integrated Circuits (eBook, PDF)

Silicon-Germanium Heterostructure Devices: Basics and Realisations

• Format: PDF

Produktbeschreibung

Quantum size effects are becoming increasingly important in microelectronics, as the dimensions of the structures shrink laterally towards 100 nm and vertically towards 10 nm. Advanced device concepts will exploit these effects for integrated circuits with novel or improved properties. Keeping in mind the trend towards systems on chip, this book deals with silicon-based quantum devices and focuses on room-temperature operation. The basic physical principles, materials, technological aspects, and fundamental device operation are discussed in an interdisciplinary manner. It is shown that silicon-germanium (SiGe) heterostructure devices will play a key role in realizing silicon-based quantum electronics.

Produktdetails

• Verlag: Springer Berlin
• Erscheinungstermin: 11. Dezember 2005
• Englisch
• ISBN-13: 9783540263821
• Artikelnr.: 37360268

Autorenporträt

E. Kasper, University of Stuttgart, Germany / D.J. Paul, University of Cambridge, UK

Inhaltsangabe

Material Science.- Resumé of Semiconductor Physics.- Realisation of Potential Barriers.- Electronic Device Principles.- Heterostructure Bipolar Transistors - HBTs.- Hetero Field Effect Transistors (HFETs).- Tunneling Phenomena.- Optoelectronics.- Integration.- Outlook.

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Material Science.- Resumé of Semiconductor Physics.- Realisation of Potential Barriers.- Electronic Device Principles.- Heterostructure Bipolar Transistors - HBTs.- Hetero Field Effect Transistors (HFETs).- Tunneling Phenomena.- Optoelectronics.- Integration.- Outlook.