C. K Maiti, S. Chattopadhyay, L. K Bera

Strained-Si Heterostructure Field Effect Devices (eBook, ePUB)

• Format: ePub

Produktbeschreibung

This book brings together the materials science, manufacturing processes, and innovative research and developments of SiGe and strained-Si for the first time in book form. It contains the latest state-of-the-art information on strain engineering in silicon CMOS and strained-Si-based integrated circuit technology as well as strain-engineered MOSFETs. The book presents various aspects of silicon heterostructure materials, processes, devices, and applications. It also includes up-to-date research results, a comprehensive list of seminal references, 300 figures, and 30 tables. The diversity of R&D activities and results presented in this book will undoubtedly spark further development in the field.

---

Dieser Download kann aus rechtlichen Gründen nur mit Rechnungsadresse in A, B, BG, CY, CZ, D, DK, EW, E, FIN, F, GR, HR, H, IRL, I, LT, L, LR, M, NL, PL, P, R, S, SLO, SK ausgeliefert werden.

Produktdetails

• Verlag: Taylor & Francis
• Erscheinungstermin: 11. Januar 2007
• Englisch
• ISBN-13: 9781040070567
• Artikelnr.: 73209023

Autorenporträt

C.K Maiti, S Chattopadhyay, L.K Bera