Manijeh Razeghi

The MOCVD Challenge (eBook, PDF)

A survey of GaInAsP-InP and GaInAsP-GaAs for photonic and electronic device applications, Second Edition

• Format: PDF

Produktbeschreibung

Now in its second edition, this updated, combined volume provides a survey of GaInAsP-InP and GaInAsP-GaAs related materials for electronic and photonic device applications. It begins with an introduction to semiconductor compounds and the MOCVD growth process. It then discusses in situ and ex situ characterization techniques for MOCVD growth. Next, the book examines the specifics of the growth of GaAs and the growth and characterization of the GaAs-GaInP system. It describes optical devices based on GaAs and related compounds and details the specifics of GaAs-based laser diode structures. Coverage also includes discussion of electronic devices and an overview of optoelectronic integrated circuits (OEICs).

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Produktdetails

• Verlag: Taylor & Francis
• Seitenzahl: 799
• Erscheinungstermin: 17. August 2010
• Englisch
• ISBN-13: 9781439807002
• Artikelnr.: 57532730

Autorenporträt

Manijeh Razeghi is with the Center of Quantum Devices at Northwestern University.

Inhaltsangabe

Preface. Foreword. Introduction. Introduction to semiconductor compounds.
MOCVD growth technique. ^IIn-situ characterization during MOCVD. ^IEx-situ
characterization techniques. MOCVD growth of GaAs layers. Growth and
characterization of the GaInP-GaAs system. Optical devices. GaAs-based
lasers. GaAs-based heterojunction electron devices grown by MOCVD.
Optoelectronic integrated circuits (OEICs). Appendices. Effect of substrate
miscut on the measured superlattice period. Optimization of thickness and
In composition of InGaAs well for 980 nm lasers. Energy levels and laser
gains in a quantum well (GaInAsP): the 'effective mass approximation'.
Luttinger-Kohn Hamiltonian. Infrared detectors. Index.

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Introduction to Semiconductor Compounds. Growth Technology. In situ Characterization during MOCVD. Ex situ Characterization Techniques. MOCVD Growth of GaAs Layers. Growth and Characterization of the GaInP-GaAs System. Optical Devices. GaAs-Based Lasers. GaAs-Based Heterojunction Electron Devices Grown by MOCVD. Optoelectronic Integrated Circuits (OEICs). InP-InP System: MOCVD Growth, Characterization and Applications. GaInAs-InP System: MOCVD Growth, Characterization and Applications. GaInAsP-InP System: MOCVD Growth, Characterization, and Applications. MOCVD Growth, Characterization and Applications of III-V Semiconductor Strained Heterostructures. MOCVD Growth of III-V Heterojunctions and Superlattices on Silicon Substrates and their Applications. Optoelectronic Devices Based on Quantum Structures. Appendices. Index.

Rezensionen

... a comprehensive review of GaInAsP-InP and GaInAsP-GaAs materials, III-V semiconductor compounds used for photonic and electronic device applications. This second edition represents the combined updated versions of the MOCVD Challenge. The author addresses a variety of relevant topics, including: growth technology, in situ characterization during MOCVD, ex situ characterization techniques, growth of GaAs layers, growth and characterization of the GaInP-GaAs system, optical devices, GaAs-based layers, optoelectronic integrated circuits, and optoelectronic devices on quantum structures.
-SciTech Book News, February 2011