Over the past 10 years, the book's authors have performed pioneering experiments in the integration of nanocrystalline diamond capping layers into the fabrication process of compound semiconductor devices. Significant research efforts of integrating diamond and GaN have been reported by a number of groups since then, thus resulting in active thermal management options that do not necessarily lead to performance derating to avoid self-heating during radio frequency or power switching operation of these devices. Self-heating refers to the increased channel temperature caused by increased energy transfer from electrons to the lattice at high power. This book chronicles those breakthroughs.
- Includes the fundamentals of thermal management of wide-bandgap semiconductors, with historical context, a review of common heating issues, thermal transport physics, and characterization methods
- Reviews the latest strategies to overcome heating issues through materials modeling, growth and device design strategies
- Touches on emerging, real-world applications for thermal management strategies in power electronics
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