95,95 €
95,95 €
inkl. MwSt.
Sofort per Download lieferbar
95,95 €
95,95 €
inkl. MwSt.
Sofort per Download lieferbar

Alle Infos zum eBook verschenken
Als Download kaufen
95,95 €
inkl. MwSt.
Sofort per Download lieferbar
Jetzt verschenken
95,95 €
inkl. MwSt.
Sofort per Download lieferbar

Alle Infos zum eBook verschenken
  • Format: PDF

The increasing demand in electronic portability imposes low power consumption as a key metric to analog and digital circuit design. Tunnel FET (TFET) devices have been explored mostly in digital circuits, showing promising results for ultra-low power and energy efficient circuit applications. The TFET presents a low inverse sub-threshold slope (SS) that allows a low leakage energy consumption, desirable in many digital circuits, especially memories.In this book, the TFET is explored as an alternative technology also for ultra-low power and voltage conversion and management circuits, suitable…mehr

Produktbeschreibung
The increasing demand in electronic portability imposes low power consumption as a key metric to analog and digital circuit design. Tunnel FET (TFET) devices have been explored mostly in digital circuits, showing promising results for ultra-low power and energy efficient circuit applications. The TFET presents a low inverse sub-threshold slope (SS) that allows a low leakage energy consumption, desirable in many digital circuits, especially memories.In this book, the TFET is explored as an alternative technology also for ultra-low power and voltage conversion and management circuits, suitable for weak energy harvesting (EH) sources. The TFET distinct electrical characteristics under reverse bias conditions require changes in conventional circuit topologies. In this book, ultra-low input power conversion circuits based on TFETs are designed and analyzed, evaluating their performance as rectifiers, charge pumps and power management circuits (PMC) for RF and DC EH sources.

Dieser Download kann aus rechtlichen Gründen nur mit Rechnungsadresse in A, B, BG, CY, CZ, D, DK, EW, E, FIN, F, GR, HR, H, IRL, I, LT, L, LR, M, NL, PL, P, R, S, SLO, SK ausgeliefert werden.

Autorenporträt
David Cavalheiro received the M.Sc. degree in electrical engineering from the New University of Lisbon, Portugal, in 2012 and the Ph.D. degree in electronic engineering from the Universitat Politecnica de Catalunya, Spain, in 2017. His current research activities include the design of ultra-low power circuits for conversion applications. Other interests are power management circuits, emerging transistor technologies and energy harvesting.