Investigations on Magnetron Sputtered Titanium based Oxide Films - Musalikunta, Chandra Sekhar;Suda, Uthanna
51,99 €
inkl. MwSt.
Versandkostenfrei*
Versandfertig in 1-2 Wochen
payback
26 °P sammeln
  • Broschiertes Buch

The size reduction of Complementary Metal Oxide Semiconductor (CMOS) transistors requires replacement of conventional SiO2 layer with higher dielectric constant (k) material for gate dielectric, in order to reduce the gate leakage current and also to maximize gate capacitance. Among the many possible transition- metal oxide materials, titanium dioxide (TiO2) is a potential candidate because of its high energy band gap, refractive index and dielectric constant.

Andere Kunden interessierten sich auch für
Produktbeschreibung
The size reduction of Complementary Metal Oxide Semiconductor (CMOS) transistors requires replacement of conventional SiO2 layer with higher dielectric constant (k) material for gate dielectric, in order to reduce the gate leakage current and also to maximize gate capacitance. Among the many possible transition- metal oxide materials, titanium dioxide (TiO2) is a potential candidate because of its high energy band gap, refractive index and dielectric constant.
Hinweis: Dieser Artikel kann nur an eine deutsche Lieferadresse ausgeliefert werden.
Autorenporträt
He received the B.Sc. degree with First Class from Sri Venkateswara University, Tirupati, India in 2001 and the M.S. and Ph.D. degrees from the Sri Venkateswara University, Tirupati, in 2005 and 2012, respectively. In 2012, Dr. M. Chandra Sekhar joined the Department of Physics, Madanapalle Institute of Technology & Science, Madanapalle, India.