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Hydrogenous species play a key role in radiation
induced charge buildup in metal oxide semiconductor
field effect transistors (MOSFETs). The amount of
hydrogen present in ambient gases used during device
fabrication can be correlated to the concentration of
radiation-induced interface traps post processing.
The effects of water on defect formation in MOSFETs
before and after radiation exposure have been
studied. Greatly enhanced post-irradiation defect
generation was observed in the gate oxides of
p-channel MOS transistors that were exposed to water.
Low frequency (1/f) noise measurements also showed
enhanced noise power spectral densities in the
p-channel transistors consistent with the enhanced
post-irradiation increase in defect density.
Phosphorus and boron dopant atoms are present in the
field oxides of the n-channel and p-channel
transistors because of source and drain implant
steps. This can lead to enhanced water-induced defect
formation in the gate oxides of p-channel transistors
compared to n-channel transistors before and after
irradiation. These results are significant for the
performance of MOS technologies in non-hermetic
environments.
induced charge buildup in metal oxide semiconductor
field effect transistors (MOSFETs). The amount of
hydrogen present in ambient gases used during device
fabrication can be correlated to the concentration of
radiation-induced interface traps post processing.
The effects of water on defect formation in MOSFETs
before and after radiation exposure have been
studied. Greatly enhanced post-irradiation defect
generation was observed in the gate oxides of
p-channel MOS transistors that were exposed to water.
Low frequency (1/f) noise measurements also showed
enhanced noise power spectral densities in the
p-channel transistors consistent with the enhanced
post-irradiation increase in defect density.
Phosphorus and boron dopant atoms are present in the
field oxides of the n-channel and p-channel
transistors because of source and drain implant
steps. This can lead to enhanced water-induced defect
formation in the gate oxides of p-channel transistors
compared to n-channel transistors before and after
irradiation. These results are significant for the
performance of MOS technologies in non-hermetic
environments.