Characterization of Al-doped CdS thin films
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Aluminum doped cadmium sulfide (Cd1-xAlxS) thin films for different values of x (0.00- 0.18) have been prepared by spray pyrolysis technique on to glass substrates. The surface morphology, structural, optical and electrical properties of the films are studied in details. The photoconductive CdS thin films are applicable for photodiodes, X-ray detectors and FET transistor, etc. CdAlS thin films regarded as a prime candidate for solar cell fabrication because of large energy band gap, high refractive index, high optical absorption and also suitability of these films for various optoelectronics a...
Aluminum doped cadmium sulfide (Cd1-xAlxS) thin films for different values of x (0.00- 0.18) have been prepared by spray pyrolysis technique on to glass substrates. The surface morphology, structural, optical and electrical properties of the films are studied in details. The photoconductive CdS thin films are applicable for photodiodes, X-ray detectors and FET transistor, etc. CdAlS thin films regarded as a prime candidate for solar cell fabrication because of large energy band gap, high refractive index, high optical absorption and also suitability of these films for various optoelectronics applications.
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