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This work discusses the methods of electrical characterization of MOSFETs manufactured in 0.18um mixed signal process over a wide temperature range of 40K to 298K for the development of wide temperature compact models. The effects of low-temperature operation on the performance of 0.18µm MOSFETs have been studied and discussed in terms of sub-threshold characteristics, threshold-voltage, the effect of the body bias and linearity of the device. As it is well understood, the subthreshold slope, the threshold voltage, drive currents of the MOSFETs increase when the temperature of the MOSFETs is…mehr

Produktbeschreibung
This work discusses the methods of electrical characterization of MOSFETs manufactured in 0.18um mixed signal process over a wide temperature range of 40K to 298K for the development of wide temperature compact models. The effects of low-temperature operation on the performance of 0.18µm MOSFETs have been studied and discussed in terms of sub-threshold characteristics, threshold-voltage, the effect of the body bias and linearity of the device. As it is well understood, the subthreshold slope, the threshold voltage, drive currents of the MOSFETs increase when the temperature of the MOSFETs is lowered, which makes it advantageous to operate the MOSFETs at low-temperatures. However the ID-VG characteristics of MOSFETs become more non-linear as the operating temperature of the MOSFETs is reduced.
Autorenporträt
Achal Kathuria received the B.Tech degree from Dhirubhai Ambani Institute of Information and Communication Technology, Gandhinagar, India, in 2007 and MS degree from Arizona State University in 2010. He worked on extreme low-temperature characterization of MOSFETs for his master's thesis. He is currently working as a design engineer at SanDisk.