Chemical H-Insertion into Gamma-Manganese Dioxides at Low Temperature - Elmouna, Ahmed
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Gamma Manganese Dioxides (g-MnOx) are non-stoichiometric, stable, layered materials with interstitial space to accommodate inserted ions. g-MnOx have been used as battery materials for decades. This book presents an easy to read comprehensive body of research work into the production of a series of H-inserted g-MnOx (with 1.5x2); thoroughly characterised using a range of techniques including XRD, SEM and FTIR and electrode potential measurements. The characterisation reveled many interesting structural changes in the materials caused by H-insertion. The FTIR study at low temperature presents,…mehr

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Produktbeschreibung
Gamma Manganese Dioxides (g-MnOx) are non-stoichiometric, stable, layered materials with interstitial space to accommodate inserted ions. g-MnOx have been used as battery materials for decades. This book presents an easy to read comprehensive body of research work into the production of a series of H-inserted g-MnOx (with 1.5x2); thoroughly characterised using a range of techniques including XRD, SEM and FTIR and electrode potential measurements. The characterisation reveled many interesting structural changes in the materials caused by H-insertion. The FTIR study at low temperature presents, for the first time, tangible evidence of mobile H in one of the most defected g-MnOx. This can open avenues of new applications of MnOx as well as other layered materials of similar structures like conducting oxides.
Autorenporträt
Ahmed earned a first class degree in Chemistry (Mauritania 1995), MSc in Electrochemistry (France, 96) and a PhD from Middlesex University, London 2001. He worked for the UK Ministry of Defense for many years before joining Teesside University, UK. He is now Head of Analytical Chemistry at MDPTU, Hail University- Saudi Arabia.