In this book, have four stage: - The first stage: the used silicon wafer n-type and then sample preparation 2x2 cm2 and then remove the oxide layer by HF solution. The second stage: the photo-electrochemical etching method was used to produce PSi at different etching times (15, 20, 25 and 30) min, and with the different power density (7, 13, 18, 25) mW/cm2. The third stage: have been Fabrication of (AuNPs /meso PSi)for gas sensor, and then the described the (AuNPs / PSi ) by Porosity and layer thickness, SEM, PL, FTIR, X-Ray. The Fourth stage: the Measuring the sensor Performance for CO2 and CO gas sensor.
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