Andere Kunden interessierten sich auch für
![Introduction to Junctionless Double Gate MOSFET]( "Introduction to Junctionless Double Gate MOSFET")
Introduction to Junctionless Double Gate MOSFET26,99 €![Analytical Modeling and Simulation of TMSG MOSFETs]( "Analytical Modeling and Simulation of TMSG MOSFETs")
Analytical Modeling and Simulation of TMSG MOSFETs46,99 €![Performance Enhancement of SRAM FINFET using different Gate materials]( "Performance Enhancement of SRAM FINFET using different Gate materials")
Performance Enhancement of SRAM FINFET using different Gate materials23,99 €![Charge Independent Modelling of Floating Gate MOSFET]( "Charge Independent Modelling of Floating Gate MOSFET")
Charge Independent Modelling of Floating Gate MOSFET36,99 €![Gate Diffusion Input (GDI) Technique]( "Gate Diffusion Input (GDI) Technique")
Gate Diffusion Input (GDI) Technique23,99 €![Investigation of Ultra-Scaled Multi-Gate Transistors]( "Investigation of Ultra-Scaled Multi-Gate Transistors")
Investigation of Ultra-Scaled Multi-Gate Transistors34,99 €![Moore¿s Law Alive: Gate-All-Around (GAA) Next Generation Transistor]( "Moore¿s Law Alive: Gate-All-Around (GAA) Next Generation Transistor")
Moore¿s Law Alive: Gate-All-Around (GAA) Next Generation Transistor36,99 €
Scaling has played an important role in reducing the size of the transistor so as to govern the Moore's law, but due to down scaling of the transistor size there is deterioration in the performance of the transistor. In this book we have discussed such effects and tried to minimise these effects. We have discussed about the recent available technology i.e different gated structures such as single gate, double gate, triple gate and gate all around which will control the electrostatic potential in the channel and reduces these short channel effects. Also we have varied different physical parameters so as to reduce these quantum effects.