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The microlithographic process, essential in the
fabrication of microdevices, uses high-energy
radiation to transfer a pattern onto a thin film of
polymer resist. Pattern transfer occurs by modifying
the properties (solubility or volatility) of the
polymer film exposed to radiation. Poly(olefin
sulfones) exhibit a high sensitivity to
x-rays, which is a desirable property for polymer
resists used in the microlithographic process. The
potential utility of these new resins prompted a
study of the mechanism of degradation promoted by x-
ray radiation. In this study, the effect of x-ray
radiation on polysulfones with varied chemical
structures was analyzed using x-ray absorption near-
edge structure (XANES) spectroscopy and in-situ mass
spectroscopy (MS). Interesting differences in the
mode of degradation of certain poly(olefin sulfones)
was observed. The results provide important
groundwork for further studies of polysulfones as x-
ray resists.
fabrication of microdevices, uses high-energy
radiation to transfer a pattern onto a thin film of
polymer resist. Pattern transfer occurs by modifying
the properties (solubility or volatility) of the
polymer film exposed to radiation. Poly(olefin
sulfones) exhibit a high sensitivity to
x-rays, which is a desirable property for polymer
resists used in the microlithographic process. The
potential utility of these new resins prompted a
study of the mechanism of degradation promoted by x-
ray radiation. In this study, the effect of x-ray
radiation on polysulfones with varied chemical
structures was analyzed using x-ray absorption near-
edge structure (XANES) spectroscopy and in-situ mass
spectroscopy (MS). Interesting differences in the
mode of degradation of certain poly(olefin sulfones)
was observed. The results provide important
groundwork for further studies of polysulfones as x-
ray resists.