Donald T.J. Hurle

Crystal Pulling from the Melt

• Broschiertes Buch

Produktbeschreibung

Crystal pulling is an industrial process and provides the bulk of semiconductor crystals for the semiconductor industry. Initially a purely empirical process, the increase in importance and size of the industry has led to basic research into the fundamentals of the process - particularly the modelling of heat and mass transfer. The book has been written by the recognized authority on Czochralski crystal-growth techniques. It is an attempt to strengthen the interface between the practical crystal grower and the applied mathematician involved in analytical and computer modelling. Its focus is on the physics, chemistry and metallurgy of the process. From reviews: "... There is a need for a modern, non-trivial text on Czochralski growth ... and Dr. Hurle is eminently suited to write such a text."; "Dr. Hurle is probably uniquely qualified to write a book on ... (the Czochralski) growth process. ... He has published a great deal of very substantial as well as innovative work in this area."

Produktdetails

• Verlag: Springer / Springer Berlin Heidelberg / Springer, Berlin
• Artikelnr. des Verlages: 978-3-642-78210-7
• Softcover reprint of the original 1st ed. 1993
• Seitenzahl: 164
• Erscheinungstermin: 28. Dezember 2011
• Englisch
• Abmessung: 235mm x 155mm x 10mm
• Gewicht: 259g
• ISBN-13: 9783642782107
• ISBN-10: 3642782108
• Artikelnr.: 36113957

Autorenporträt

Crystal pulling from the melt is an industrial process. It is applied primarily in the USA, Japan, UK, France, and Germany and provides bulk crystals for the chips industry. The author is a world-recognized authority on this (Czochralski crystal-growth) process and he has published many fundamental papers during his more than 30 years of research. The book addresses practical crystal growers and modellers alike. It provides the understanding of convective flow and heat and mass transfer and of the coupling of these effects. It is a modern, complete and non-trivial text.

Inhaltsangabe

1 Introduction and Historical Perspective.- 2 Elements of the Process.- 2.1 Introduction.- 2.2 Heat Balance and Growth Rate.- 2.3 The Meniscus.- 2.4 Crystal Rotation.- 3 Techniques and Technology.- 3.1 Introduction.- 3.2 Silicon.- 3.3 Gallium Arsenide.- 3.4 Oxides.- 4 Convection and Flow in the Melt.- 4.1 Melt Convection.- 4.2 Flow Due to a Rotating Disc.- 4.3 Natural Convective Flow.- 5 Heat Transport.- 5.1 Introduction.- 5.2 Heat Loss from the Cooling Crystal.- 5.3 The Thermal-Capillary Model.- 5.4 Heat Transfer in the Encapsulant.- 5.5 Global Heat Transport.- 5.6 Optically Semi-Transparent Crystals.- 6 Mass Transport and Solute Segregation.- 6.1 Introduction.- 6.2 The Burton, Prim and Slichter Analysis.- 6.3 Macrosegregation.- 6.4 Microsegregation.- 7 The Use of a Magnetic Field.- 7.1 Motivation.- 7.2 Interaction of a Magnetic Field with Melt Flow.- 7.3 Generation of the Magnetic Field.- 7.4 Magnetic Field Configurations.- 7.5 Flow and Segregation in a Magnetic Field.- 7.6 Applications.- 7.7 Concluding Remarks.- 8 System Dynamics and Automatic Diameter Control.- 8.1 Introduction.- 8.2 Dynamic Stability.- 8.3 Meniscus Dynamics.- 8.4 Linear Stability Analysis.- 8.5 Automatic Diameter Control.- 8.6 Dynamics of Control by the Weighing Technique.- 9 Morphological Stability of a Planar Rotating Interface.- 9.1 Introduction.- 9.2 Constitutional Supercooling.- 9.3 Cellular Structures.- 9.4 Linear Stability Theory.- 10 The Cooling Crystal.- 10.1 Introduction.- 10.2 Stress Distribution and Dislocation Generation in Gallium Arsenide and Indium Phosphide.- 10.3 Point Defect Equilibria in the Cooling Crystal.- 11 Future Developments.- 12 References.