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This review summarizes the information on the Cathodoluminescence studies of minority carrier transport in Wide-Band-Gap semiconductors, focusing on its temperature dependence and the dynamics of non-equilibrium carrier recombination. The influence of deep traps on minority carrier diffusion length and lifetime is discussed. The experimental results, showing the impact of minority carrier transport on the performance of bipolar devices, as well as a discussion of techniques, used for measurements of the minority carrier diffusion length and lifetime, are provided.