1.5 µm GaN/AlN MQWs Intersubband All-Optical Switches - Sodabanlu, Hassanet
51,99 €
inkl. MwSt.
Versandkostenfrei*
Versandfertig in 6-10 Tagen
  • Broschiertes Buch

So far, a strong intersubband transition at 1.55-µm wavelength range was very difficult to achieve in GaN/AlN multiple quantum wells (MQWs) grown by metalorganic vapor phase epitaxy (MOVPE) using conventional growth method. This book first provides a general introduction to the physics of intersubband transition in GaN/AlN MQWs and its device applications especially all-optical switches operating at commutation wavelength. Later on, the issues with regard to conventional MOVPE were comprehensively discussed and analyzed. As a solution of these problems, a growth technique called…mehr

Andere Kunden interessierten sich auch für
Produktbeschreibung
So far, a strong intersubband transition at 1.55-µm wavelength range was very difficult to achieve in GaN/AlN multiple quantum wells (MQWs) grown by metalorganic vapor phase epitaxy (MOVPE) using conventional growth method. This book first provides a general introduction to the physics of intersubband transition in GaN/AlN MQWs and its device applications especially all-optical switches operating at commutation wavelength. Later on, the issues with regard to conventional MOVPE were comprehensively discussed and analyzed. As a solution of these problems, a growth technique called pulse-injection method was employed to achieve intersubband absorption at 1.55-µm wavelength range. The effects of growth parameters on the properties of intersubband transition were investigated and discussed. Various types of AlN-based waveguides, including ridge, high-mesa, and spot-size converter, with GaN/AlN MQWs absorber were designed and fabricated. The saturation of intersubband absorption which determines the functionality of all-optical switch was clearly observed. This book demonstrated the potential of MOVPE-grown GaN/AlN MQWs for intersubband devices operating at communication wavelength.
Autorenporträt
Hassanet Sodabanlu graduated from Graduate School of Engineering, The University of Tokyo in 2010. His Ph. D. thesis related to the growth of nitride semiconductors by MOVPE, especially GaN/AlN MQWs for intersubband transition devices.